Patents by Inventor Shou-Chun Chou

Shou-Chun Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar junction transistor layout
    Patent number: 9780089
    Abstract: A bipolar junction transistor includes an emitter, a base contact, a collector and a shallow trench isolation. The base contact has two base fingers that form a corner to receive the emitter. The collector has two collector fingers extending along the base fingers of the base contact. The shallow trench isolation is disposed in between the emitter and the base contact and in between the base contact and the collector.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: October 3, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Han-Min Tsai, Chi-Feng Huang, Chia-Chung Chen, Victor Chiang Liang, Hsiao-Chun Lee, Shou-Chun Chou, Shu-Fang Fu
  • BIPOLAR JUNCTION TRANSISTOR LAYOUT
    Publication number: 20170047323
    Abstract: A bipolar junction transistor includes an emitter, a base contact, a collector and a shallow trench isolation. The base contact has two base fingers that form a corner to receive the emitter. The collector has two collector fingers extending along the base fingers of the base contact. The shallow trench isolation is disposed in between the emitter and the base contact and in between the base contact and the collector.
    Type: Application
    Filed: October 31, 2016
    Publication date: February 16, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Han-Min TSAI, Chi-Feng HUANG, Chia-Chung CHEN, Victor Chiang LIANG, Hsiao-Chun LEE, Shou-Chun CHOU, Shu-Fang FU
  • Bipolar junction transistor layout
    Patent number: 9484408
    Abstract: A bipolar junction transistor includes an emitter, a base contact, a collector and a shallow trench isolation. The base contact has two base fingers that form a corner to receive the emitter. The collector has two collector fingers extending along the base fingers of the base contact. The shallow trench isolation is disposed in between the emitter and the base contact and in between the base contact and the collector.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: November 1, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Han-Min Tsai, Chi-Feng Huang, Chia-Chung Chen, Victor Chiang Liang, Hsiao-Chun Lee, Shou-Chun Chou, Shu-Fang Fu