Patents by Inventor Shou-Lung Chen

Shou-Lung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12101919
    Abstract: A wearable display device is disclosed and includes a main body, a heat dissipation processing module and an inflatable actuation module. The main body includes a front cover, a lateral cover, an inflatable airbag, a circuit board and a microprocessor. The heat dissipation processing module is configured to perform heat exchange with the microprocessor, and includes a first actuator, a heat pipe and a cooling chip. The inflatable actuation module includes a base, a ventilation channel, a second actuator and a valve component. When the second actuator and the valve component are driven, the valve component is opened and the second actuator is enabled, the gas is transported and inflates the inflatable airbag through the ventilation channel, so that the main body is stably fitted and positioned on the head of the wearer.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: September 24, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Ta-Wei Hsueh, Yu-Tzu Chen, Shou-Cheng Cheng, Chi-Feng Huang, Yung-Lung Han, Tsung-I Lin
  • Publication number: 20240304753
    Abstract: A semiconductor device includes a bonding structure having a top, a back opposite the top, a first side and a second side opposite the first side, wherein the first side and the second side between the top and the back; and columnar structures over the back of the bonding structure. The columnar structures include a first columnar structure nearest to the first side and a second columnar structure nearest to the second side. The semiconductor device further includes a first electrode disposed over at least portion of the columnar structures and electrically connected to at least one of the columnar structures, and a second electrode disposed over at least portion of the back of the bonding structure and electrically connected to at least one of the columnar structures.
    Type: Application
    Filed: May 17, 2024
    Publication date: September 12, 2024
    Inventors: Tzu-Chieh HSU, Yi-Wen HUANG, Shou-Lung CHEN, Hsin-Kang CHEN
  • Patent number: 12027644
    Abstract: A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.
    Type: Grant
    Filed: March 28, 2023
    Date of Patent: July 2, 2024
    Assignee: IREACH CORPORATION
    Inventors: Tzu-Chieh Hsu, Yi-Wen Huang, Shou-Lung Chen, Hsin-Kang Chen
  • Publication number: 20240128713
    Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.
    Type: Application
    Filed: December 27, 2023
    Publication date: April 18, 2024
    Inventors: Hsiu-Ju YANG, Shou-Lung CHEN, Hsin-Chan CHUNG
  • Patent number: 11901694
    Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.
    Type: Grant
    Filed: March 2, 2021
    Date of Patent: February 13, 2024
    Assignee: iReach Corporation
    Inventors: Hsiu-Ju Yang, Shou-Lung Chen, Hsin-Chan Chung
  • Publication number: 20230246125
    Abstract: A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.
    Type: Application
    Filed: March 28, 2023
    Publication date: August 3, 2023
    Inventors: Tzu-Chieh HSU, Yi-Wen HUANG, Shou-Lung CHEN, Hsin-Kang CHEN
  • Patent number: 11699774
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: July 11, 2023
    Assignee: EPISTAR CORPORATION
    Inventors: Tzu-Chieh Hsu, Yi-Wen Huang, Shou-Lung Chen, Hsin-Kang Chen
  • Publication number: 20230155349
    Abstract: A semiconductor light emitting device includes a substrate, a first epitaxial structure and a second epitaxial structure, a connecting layer, a first electrode structure, a second electrode structure, and a third electrode structure. The first epitaxial structure and the second epitaxial structure are on the substrate side by side. The connecting layer is between the first epitaxial structure and the substrate, between the second epitaxial structure and the substrate, and between the first epitaxial structure and the second epitaxial structure. The first electrode structure is on the first epitaxial structure away from the substrate. The second electrode structure is on the second epitaxial structure away from the substrate. The third electrode structure is connected to the connecting layer.
    Type: Application
    Filed: November 8, 2022
    Publication date: May 18, 2023
    Inventors: Shou-Lung CHEN, Hsin-Chan CHUNG, Tzu-Chieh HSU, Chi-Hsun HSIEH
  • Publication number: 20230067254
    Abstract: A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.
    Type: Application
    Filed: November 9, 2022
    Publication date: March 2, 2023
    Inventors: Hsin-Chan CHUNG, Shou-Lung CHEN
  • Publication number: 20230005900
    Abstract: A chip package structure includes a substrate having a first surface and a second surface being opposite surfaces of the substrate; a housing disposed on the first surface of the substrate and enclosing a chip region; and a chip set disposed in the chip region and electrically connected to the substrate. The chip set includes a first chip and a second chip, and an active surface of the second chip faces the active surface of the first chip.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 5, 2023
    Inventors: Hsiu-Ju YANG, Hsin-Chan CHUNG, Shou-Lung CHEN, Chi-Hsun HSIEH
  • Patent number: 11532921
    Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: December 20, 2022
    Assignees: EPISTAR CORPORATION, iReach Corporation
    Inventors: Hsin-Chan Chung, Shou-Lung Chen
  • Publication number: 20220158413
    Abstract: A semiconductor laser includes a base, an epitaxial structure on the base, and a first electrode and a second electrode on the epitaxial structure. The epitaxial structure includes a first semiconductor structure on the base, a second semiconductor structure on the first semiconductor structure, an intermediate layer on the second semiconductor structure, a third semiconductor structure on the intermediate layer, a current-confining layer in the third semiconductor structure, a fourth semiconductor structure on the third semiconductor structure, and an active structure between the third semiconductor structure and the fourth semiconductor structure. The first electrode and the second electrode are on the fourth semiconductor structure, wherein a part of the first electrode passes through the fourth semiconductor structure, the active structure, the current-confining layer and the third semiconductor structure and is connected to the intermediate layer.
    Type: Application
    Filed: November 15, 2021
    Publication date: May 19, 2022
    Inventors: Bing-Cheng LIN, Shou-Lung CHEN, Chi-Hsun HSIEH, Hsin-Chan CHUNG
  • Publication number: 20220149589
    Abstract: A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.
    Type: Application
    Filed: January 26, 2022
    Publication date: May 12, 2022
    Inventors: Shou-Lung CHEN, Hsin-Chan CHUNG
  • Publication number: 20220085571
    Abstract: A package structure of a laser device is provided, including: a first light transmissive substrate including a first surface, a second surface opposing the first surface, a first side surface between the first surface and the second surface, and a second side surface opposing the first side surface; a laser structure including a first laser chip and a second laser chip which are disposed on the first surface, and the first laser chip including a third side surface; a first optical component disposing on the first light transmissive substrate and corresponding in position to the first laser chip; and a second optical component disposing on the light transmissive substrate and corresponding in position to the second laser chip; wherein the first side surface is coplanar with the third side surface.
    Type: Application
    Filed: September 17, 2021
    Publication date: March 17, 2022
    Applicant: iReach Corporation
    Inventors: Shou-Lung Chen, Hsin-Chan Chung, Hsiu-Ju Yang, Chih-Chiang Lu, Kuo-Min Huang
  • Patent number: 11271365
    Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate and having a first side surface, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer and having a second side surface, a back conductive structure, which comprises a first detecting electrode and a second detecting electrode separated from the first detecting electrode, a passivation layer covering one of the first side surface and the second side surface, and first via holes extending from the back conductive structure to the conductive layer, wherein the first detecting electrode and the second detecting electrode are electrically connected to the conductive layer through the first via holes.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: March 8, 2022
    Assignee: iReach Corporation
    Inventors: Shou-Lung Chen, Hsin-Chan Chung
  • Publication number: 20210336079
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.
    Type: Application
    Filed: May 28, 2021
    Publication date: October 28, 2021
    Inventors: Tzu-Chieh HSU, Yi-Wen HUANG, Shou-Lung CHEN, Hsin-Kang CHEN
  • Publication number: 20210273403
    Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.
    Type: Application
    Filed: March 2, 2021
    Publication date: September 2, 2021
    Inventors: Hsiu-Ju YANG, Shou-Lung CHEN, Hsin-Chan CHUNG
  • Patent number: 11024768
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: June 1, 2021
    Assignee: Epistar Corporation
    Inventors: Tzu-Chieh Hsu, Yi-Wen Huang, Shou-Lung Chen, Hsin-Kang Chen
  • Publication number: 20200350742
    Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.
    Type: Application
    Filed: April 30, 2020
    Publication date: November 5, 2020
    Inventors: Hsin-Chan CHUNG, Shou-Lung CHEN
  • Patent number: 10756960
    Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap an
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: August 25, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Wen-Luh Liao, Shou-Lung Chen, Chien-Fu Huang