Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Abstract: A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: A semiconductor light emitting device includes a substrate, a first epitaxial structure and a second epitaxial structure, a connecting layer, a first electrode structure, a second electrode structure, and a third electrode structure. The first epitaxial structure and the second epitaxial structure are on the substrate side by side. The connecting layer is between the first epitaxial structure and the substrate, between the second epitaxial structure and the substrate, and between the first epitaxial structure and the second epitaxial structure. The first electrode structure is on the first epitaxial structure away from the substrate. The second electrode structure is on the second epitaxial structure away from the substrate. The third electrode structure is connected to the connecting layer.

Abstract: A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.

Abstract: A chip package structure includes a substrate having a first surface and a second surface being opposite surfaces of the substrate; a housing disposed on the first surface of the substrate and enclosing a chip region; and a chip set disposed in the chip region and electrically connected to the substrate. The chip set includes a first chip and a second chip, and an active surface of the second chip faces the active surface of the first chip.

Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

Abstract: A semiconductor laser includes a base, an epitaxial structure on the base, and a first electrode and a second electrode on the epitaxial structure. The epitaxial structure includes a first semiconductor structure on the base, a second semiconductor structure on the first semiconductor structure, an intermediate layer on the second semiconductor structure, a third semiconductor structure on the intermediate layer, a current-confining layer in the third semiconductor structure, a fourth semiconductor structure on the third semiconductor structure, and an active structure between the third semiconductor structure and the fourth semiconductor structure. The first electrode and the second electrode are on the fourth semiconductor structure, wherein a part of the first electrode passes through the fourth semiconductor structure, the active structure, the current-confining layer and the third semiconductor structure and is connected to the intermediate layer.

Abstract: A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

Abstract: A package structure of a laser device is provided, including: a first light transmissive substrate including a first surface, a second surface opposing the first surface, a first side surface between the first surface and the second surface, and a second side surface opposing the first side surface; a laser structure including a first laser chip and a second laser chip which are disposed on the first surface, and the first laser chip including a third side surface; a first optical component disposing on the first light transmissive substrate and corresponding in position to the first laser chip; and a second optical component disposing on the light transmissive substrate and corresponding in position to the second laser chip; wherein the first side surface is coplanar with the third side surface.

Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate and having a first side surface, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer and having a second side surface, a back conductive structure, which comprises a first detecting electrode and a second detecting electrode separated from the first detecting electrode, a passivation layer covering one of the first side surface and the second side surface, and first via holes extending from the back conductive structure to the conductive layer, wherein the first detecting electrode and the second detecting electrode are electrically connected to the conductive layer through the first via holes.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap an

Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer, a back conductive structure opposite to the front conductive structure, which comprises a plurality of detecting electrodes separated from each other, and a via hole extending from the back conductive structure to the conductive layer, wherein the plurality of detecting electrodes electrically connected to the conductive layer through the via hole

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: A semiconductor device includes a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first electrode on the first surface and electrically connected to the first reflective structure. The semiconductor device further includes a second electrode on the first surface and electrically connected to the second reflective structure. The semiconductor device further includes a first conductive layer on the second surface of the cavity region and including a hole formed therethrough.