Patents by Inventor Shou-Sian Chen

Shou-Sian Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10381056
    Abstract: A dual port static random access memory (DPSRAM) cell includes a first power line, a first bit line and a second bit line. The first power line is disposed between a first word line and a second word line. The first bit line is disposed between the first word line and the first power line. The second bit line is disposed between the second word line and the first power line.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: August 13, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tien-Yu Lu, Chun-Hsien Huang, Ching-Cheng Lung, Yu-Tse Kuo, Shou-Sian Chen, Koji Nii, Yuichiro Ishii
  • Publication number: 20190206459
    Abstract: A dual port static random access memory (DPSRAM) cell includes a first power line, a first bit line and a second bit line. The first power line is disposed between a first word line and a second word line. The first bit line is disposed between the first word line and the first power line. The second bit line is disposed between the second word line and the first power line.
    Type: Application
    Filed: May 29, 2018
    Publication date: July 4, 2019
    Inventors: Tien-Yu Lu, Chun-Hsien Huang, Ching-Cheng Lung, Yu-Tse Kuo, Shou-Sian Chen, Koji Nii, Yuichiro Ishii