Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

Abstract: A method for fabricating semiconductor device includes the steps of providing a substrate having a first region and a second region, forming a first fin-shaped structure on the first region, removing part of the first fin-shaped structure to form a first trench, forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure, forming a first gate structure and a second gate structure on the DDB structure as a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure, and forming a contact plug between the first gate structure and the second gate structure on the DDB structure.

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure; and forming a first gate structure and a second gate structure on the DDB structure. Preferably, a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure; and forming a first gate structure and a second gate structure on the DDB structure. Preferably, a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure.

Abstract: A photoresist coating process including a first step and a second step is provided. In the first step, a wafer is accelerated by a first average acceleration. In the second step, the wafer is accelerated by a second average acceleration. The first acceleration and the second acceleration are both larger than zero, and photoresist material is provided to the wafer only in the second step.

Abstract: A photoresist coating process including a first step and a second step is provided. In the first step, a wafer is accelerated by a first average acceleration. In the second step, the wafer is accelerated by a second average acceleration. The first acceleration and the second acceleration are both larger than zero, and photoresist material is provided to the wafer only in the second step.

Abstract: A method of forming at least one wire on a substrate comprising at least one conductive region is provided. AnAn insulatingayer is disposed on the substrate. The method includes forming a hard mask layer on the insulating layer followed by forming at least one recess by removing portions of the hard mask layer and the insulating layer, forming a light blocking layer on the hard mask layer and the recess, and the light blocking layer and the hard mask layer forming a composite layer, forming a gap filling layer filling up the recess on the light blocking layer, forming a photoresist layer on the gap filling layer, aligning a photo mask with the recess by utilizing the composite layer as a mask, and performing an exposure/development process to form at least one pattern above the recess in the photoresist layer.