Patents by Inventor Shou-Wei Fang

Shou-Wei Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9590177
    Abstract: An organic light-emitting display panel and a fabrication method thereof include using an inkjet printing process to form the organic emission material of the display panel and providing a specific design of the relative position of the spacer and the planarization layer with ink-repellent material such that the spacer can be effectively fixed on the array substrate without falling from the planarization layer.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: March 7, 2017
    Assignee: AU OPTRONICS CORP.
    Inventors: Shou-Wei Fang, Wei-Hao Tseng, Chia-Yang Lu, Chien-Tao Chen, Tsung-Hsiang Shih, Hung-Che Ting
  • Patent number: 9331107
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: May 3, 2016
    Assignee: Au Optronics Corporation
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Patent number: 9331106
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: May 3, 2016
    Assignee: Au Optronics Corporation
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Publication number: 20150270293
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Application
    Filed: May 22, 2015
    Publication date: September 24, 2015
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Publication number: 20150243890
    Abstract: An organic light-emitting display panel and a fabrication method thereof include using an inkjet printing process to form the organic emission material of the display panel and providing a specific design of the relative position of the spacer and the planarization layer with ink-repellent material such that the spacer can be effectively fixed on the array substrate without falling from the planarization layer.
    Type: Application
    Filed: February 5, 2015
    Publication date: August 27, 2015
    Inventors: Shou-Wei Fang, Wei-Hao Tseng, Chia-Yang Lu, Chien-Tao Chen, Tsung-Hsiang Shih, Hung-Che Ting
  • Publication number: 20150123111
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Application
    Filed: March 20, 2014
    Publication date: May 7, 2015
    Applicant: Au Optronics Corporation
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Patent number: 8541779
    Abstract: A pixel structure of an organic electroluminescence apparatus includes at least an active device connected to a scan line and a data line, a first electrode, a dielectric material layer, a first isolating layer, a second isolating layer, an organic light-emitting material layer and a second electrode. The dielectric material layer is disposed on the first electrode and has a first opening to expose the first electrode. The first isolating layer disposed on the dielectric material layer includes an oxide semiconductor material and has a second opening to expose the first electrode. The second isolating layer is disposed on the first isolating layer and has a third opening to expose the first electrode in the first opening and the first isolating layer in a sidewall of the second opening. The organic light-emitting material layer is in the third opening. The second electrode is on the organic light-emitting layer.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: September 24, 2013
    Assignee: Au Optronics Corporation
    Inventors: Hong-Syu Chen, Shou-Wei Fang, Jen-Yu Lee, Tsung-Hsiang Shih, Hsueh-Hsing Lu, Chia-Yu Chen