Abstract: A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The second semiconductor switch element includes sub micro-switch elements, each sub micro-switch element configured with a drain electrode and a source electrode. The capacitor unit includes a plurality of capacitors.

Abstract: A switch circuit package module includes at least a semiconductor switch unit and at least a first capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element and the second semiconductor switch element include a plurality of sub micro-switch elements. The capacitor unit includes a plurality of capacitors configured to cooperate with the sub micro-switch elements. The capacitors are arranged in a symmetrical distribution surrounded the semiconductor switch unit, such that impedances of any two symmetrical commutation loops each of which mainly consists of one capacitor and two sub micro-switch elements from the first semiconductor switch element and second semiconductor switch element respectively are close to or the same with each other.

Abstract: A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes sub micro-switch elements. The capacitor unit is arranged at a periphery of the semiconductor switch unit or stacked on a surface of the semiconductor switch unit, such that impedances of commutation loops between the capacitor unit and the sub micro-switch elements are close to or the same with each other.

Abstract: An electrical component is disclosed, the electrical component comprising: a magnetic body having a top surface, a bottom surface, wherein at least one first conductive through hole is formed from the top surface to bottom surface of the magnetic body; and a coil disposed in the magnetic body, wherein a first end of the coil is electrically connected to one of the at least one first conductive through hole.

Abstract: Disclosed herein is a power electronic circuit having a reference ground and a differential mode loop unit. The differential mode loop unit has a capacitance component, a switch and an electronic component, wherein the capacitance component has a first end, the switch has a first end connecting in series with the capacitance component, the electronic component has a first end, the electronic component connects in series with the capacitance component and the switch, the capacitance component and switch are packaged in a power module, the power module has a trace and at least one output pin connected to reference ground, wherein the first end of the switch or the first end of the electronic component is only connected to the first end of the capacitance component through the trace, and the first end of the capacitance component is connected to reference ground through the output pin.

Abstract: An assembled circuit is disclosed, wherein the assembled circuit comprises an inductor having a top surface, a bottom surface and side surfaces, wherein each of a plurality of conductors extends from the top surface to the bottom surface via one of the side surfaces of the inductor, wherein a circuit board is disposed over the top surface of the first electronic component and electrically connected to the plurality of conductors and a plurality of pins disposed on the bottom surface of the inductor for connecting to another circuit board.

Abstract: A power module is disclosed. The power module includes a first substrate, a first metal layer, at least one conductive structure and at least one power device. The first metal layer is disposed on the first substrate. The first metal layer has a first thickness d1. The first thickness d1 satisfies: 5 ?m?d1?50 ?m. The conductive structure is disposed at a position different to the first metal layer on the first substrate. The conductive structure has a second thickness d2. The second thickness d2 satisfies: d2?100 ?m. The power device is disposed on the first substrate, the first metal layer or the conductive structure. The driving electrode of the power device is electrically connected to the first metal layer. The power electrode of the power device is electrically coupled to the conductive structure.

Abstract: A switch circuit package module includes a semiconductor switch unit and a capacitor unit. The semiconductor switch unit includes sub micro-switch elements. The capacitor unit is arranged at a periphery of the semiconductor switch unit or stacked on a surface of the semiconductor switch unit, such that impedances of commutation loops between the capacitor unit and the sub micro-switch elements are close to or the same with each other.

Abstract: An assembled circuit is disclosed, wherein the assembled circuit comprises an inductor having a top surface, a bottom surface and side surfaces, wherein each of a plurality of conductors extends from the top surface to the bottom surface via one of the side surfaces of the inductor, wherein a circuit board is disposed over the top surface of the first electronic component and electrically connected to the plurality of conductors and a plurality of pins disposed on the bottom surface of the inductor for connecting to another circuit board.

Abstract: An assembled circuit comprising a substrate, a coil, a first conductive segment, a second conductive segment, a first through-hole connector and a second through-hole connector is disclosed. The first conductive segment is electrically connected to one end of the first through-hole connector, the other end of the first through-hole connector is electrically connected to one end of the second through-hole connector via the first conductive segment, and the other end of the second through-hole connector is electrically connected to the second conductive segment.

Abstract: A coil assembly includes at least one insulated wire and an electromagnetic interference shielding layer. The insulated wire is wound into a winding coil part. The winding coil part includes a first wire-outlet segment, a second wire-outlet segment and a central through-hole. The electromagnetic interference shielding layer is formed on the winding coil part for shielding the insulated wire. The electromagnetic interference shielding layer has lateral projection profile on the winding coil part. The electromagnetic interference shielding layer has a radial gap such that the electromagnetic interference shielding layer is a non-conducting loop.

Abstract: A power module includes a first power chip and a second power chip, each of which has at least two electrodes. The power module is applied to a power converter having a power density higher than 15 W/inch3 and a maximum efficiency higher than 92%, or to a power converter having a power density higher than 20 W/inch3 or having a maximum efficiency higher than 93%. At least one of the power chips operates at a frequency higher than 25 kHz.

Abstract: A power module includes a first heat sink, first and second power chips, a thermo-conductive insulating layer, a lead frame and a molding compound. The first heat sink has a first area and a second area. The first power chip is disposed in the first area. The thermo-conductive insulating layer is disposed in the second area. The second power chip is disposed on the heat sink through the thermo-conductive insulating layer. The lead frame is electrically connected to at least one of the first and second power chips. The molding compound covers the first and second power chips, the thermo-conductive insulating layer and a portion of the lead frame. The first heat sink is electrically connected to at least one of the first and second power chips. Because the first power chip is not disposed on the first heat sink through the thermo-conductive insulating layer, the cost can be reduced.

Abstract: A power semiconductor package structure includes a carrier, a first power chip, a second power chip, a first conductive sheet, a second conductive sheet and a third conductive sheet. The first power chip has a first surface and a second surface opposing to the first surface. A first control electrode and a first main power electrode are disposed on the first surface, and a second main power electrode is disposed on the second surface. The second surface is disposed on the carrier, and electrically connected to the carrier through the second main power electrode. The second power chip has a third surface and a fourth surface opposing to the third surface. A third main power electrode is disposed on the third surface, and a fourth main power electrode is disposed on the fourth surface. The fourth surface is disposed on the first power chip. The first conductive sheet is electrically connected to the first main power electrode and the fourth main power electrode.

Abstract: An assembled circuit comprising a substrate, a coil, a first conductive segment, a second conductive segment, a first through-hole connector and a second through-hole connector is disclosed. The first conductive segment is electrically connected to one end of the first through-hole connector, the other end of the first through-hole connector is electrically connected to one end of the second through-hole connector via the first conductive segment, and the other end of the second through-hole connector is electrically connected to the second conductive segment.

Abstract: An assembled circuit comprising an inductive component, a connecting conductor, and a first electronic component is disclosed. The connecting conductor is adapted to wrap a first surface of the inductive component. The first electronic component stacks on the inductive component. The assembled circuit is electrically connected to the carrier via the connecting conductor.

Abstract: A power semiconductor package structure includes a carrier, a first power chip, a second power chip, a first conductive sheet, a second conductive sheet and a third conductive sheet. The first power chip has a first surface and a second surface opposing to the first surface. A first control electrode and a first main power electrode are disposed on the first surface, and a second main power electrode is disposed on the second surface. The second surface is disposed on the carrier, and electrically connected to the carrier through the second main power electrode. The second power chip has a third surface and a fourth surface opposing to the third surface. A third main power electrode is disposed on the third surface, and a fourth main power electrode is disposed on the fourth surface. The fourth surface is disposed on the first power chip. The first conductive sheet is electrically connected to the first main power electrode and the fourth main power electrode.

Abstract: A power module includes a first heat sink, first and second power chips, a thermo-conductive insulating layer, a lead frame and a molding compound. The first heat sink has a first area and a second area. The first power chip is disposed in the first area. The thermo-conductive insulating layer is disposed in the second area. The second power chip is disposed on the heat sink through the thermo-conductive insulating layer. The lead frame is electrically connected to at least one of the first and second power chips. The molding compound covers the first and second power chips, the thermo-conductive insulating layer and a portion of the lead frame. The first heat sink is electrically connected to at least one of the first and second power chips. Because the first power chip is not disposed on the first heat sink through the thermo-conductive insulating layer, the cost can be reduced.

Abstract: A power module includes a first power chip and a second power chip, each of which has at least two electrodes. The power module is applied to a power converter having a power density higher than 15 W/inch3 and a maximum efficiency higher than 92%, or to a power converter having a power density higher than 20 W/inch3 or having a maximum efficiency higher than 93%. At least one of the power chips operates at a frequency higher than 25 kHz.

Abstract: A coil assembly includes at least one insulated wire and an electromagnetic interference shielding layer. The insulated wire is wound into a winding coil part. The winding coil part includes a first wire-outlet segment, a second wire-outlet segment and a central through-hole. The electromagnetic interference shielding layer is formed on the winding coil part for shielding the insulated wire. The electromagnetic interference shielding layer has lateral projection profile on the winding coil part. The electromagnetic interference shielding layer has a radial gap such that the electromagnetic interference shielding layer is a non-conducting loop.