Patents by Inventor Shoubin Xue

Shoubin Xue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heat dissipation structure of SOI field effect transistor
    Patent number: 8598636
    Abstract: The present invention discloses a heat dissipation structure for a SOI field effect transistor having a schottky source/drain, which relates to a field of microelectronics. The heat dissipation structure includes two holes connected with a drain terminal or with both a source terminal and a drain terminal, which are filled with an N-type material with high thermoelectric coefficient and a P-type material with high thermoelectric coefficient respectively. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a high potential with respect to the drain terminal, and a metal wire for the P-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a low potential with respect to the drain terminal.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: December 3, 2013
    Assignee: Peking University
    Inventors: Ru Huang, Xin Huang, Shoubin Xue, Yujie Ai
  • Heat Dissipation Structure of SOI Field Effect Transistor
    Publication number: 20130001655
    Abstract: The present invention discloses a heat dissipation structure for a SOI field effect transistor having a schottky source/drain, which relates to a field of microelectronics. The heat dissipation structure includes two holes connected with a drain terminal or with both a source terminal and a drain terminal, which are filled with an N-type material with high thermoelectric coefficient and a P-type material with high thermoelectric coefficient respectively. A metal wire for the N-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a high potential with respect to the drain terminal, and a metal wire for the P-type material with high thermoelectric coefficient in the vicinity of the drain terminal is applied a low potential with respect to the drain terminal.
    Type: Application
    Filed: August 17, 2011
    Publication date: January 3, 2013
    Inventors: Ru Huang, Xin Huang, Shoubin Xue, Yujie Ai