Abstract: A method for checking dimensions of patterns comprising: a first process of selecting patterns of a predetermined kind from a number of patterns including various kinds of patterns; and a second process of judging whether or not each of the selected patterns is formed with a predetermined dimension. The first process comprises the following steps: (i) recognizing the shape of each pattern; and (ii) selecting patterns to be checked by excluding patterns having more than a first degree of difference in shape.

Abstract: A test method and apparatus for a reticle/mask pattern used for a semiconductor fabrication is disclosed for a case in which the reticle/mask pattern is modified from the original design data and has a reduced/magnified pattern in a similar shape. The reticle/mask pattern is scanned and detected optically and electrically, and detected signal is converted to video signal and is stored as a real image pattern data in a first video memory. The original pattern data stored in a magnetic tape is read and converted to video signal, and is stored as an original design pattern data in a second video memory. After graphical operation of the original design pattern data in the second video memory, a group of modified pattern data having a gradual change of reduction/magnification ratio can be obtained. One modified pattern data having substantially same reduction/magnification ratio with reticle/mask pattern, is selected.

Abstract: A method for measuring the dimensions of a fine pattern, comprises first measuring a surface area and determining a profile of a displayed pattern image, second, calculating the center of gravity of the pattern image, third, calculating an equivalent diameter of a circular pattern having the same surface area as the pattern image, fourth, calculating a mean value of pattern lengths of lines which all pass through the center of gravity of the pattern image and which intersect the pattern image at two intersecting points; and fifth, comparing the mean value with the equivalent diameter of the circular pattern image. The pattern lengths are defined as distances between the two intersecting points.

Abstract: A reticle used in a patterning process to fabricate a semiconductor device or a photomask, having a reference pattern consisting of reference pattern pieces, each having the same shape and size, the size being less than the resolution limit of a reduction exposure performed in the patterning process. The reference pattern pieces are extensively printed in an actual pattern region being for a semiconductor die on a reticle substrate with a reticle pattern, so that the reference pattern pieces are used for inspecting the reticle pattern but do not influence the printed pattern of the reticle pattern on a substrate of the semiconductor device or the photomask. In the inspection of the reticle pattern, the reference pattern pieces are used to provide the detected reticle pattern data obtained from the reticle pattern by scanning, so as to be able to be compared with designed reticle pattern data, i.e.

Abstract: In a method for inspecting a pattern produced by using pattern data of a predetermined reference pattern, comparison is carried out between the pattern reproduced from the scanning signal of the pattern and the pattern produced from the signal of a modified form of the predetermined reference pattern.