Abstract: The invention provides a target material structure suitable for semiconductor manufacturing process, which comprises an alloy made of a first metal and a second metal, the target material structure comprises an upper section and a lower section, the atomic ratio of the first metal to the second metal in the lower section is different from the atomic ratio of the first metal to the second metal in the upper section.

Abstract: A method for fabricating a semiconductor structure is disclosed. A substrate having a dielectric layer thereon and a gate trench formed in the dielectric layer is prepared. The substrate is subjected to a physical vapor deposition (PVD) process in a physical vapor deposition chamber equipped with an auto capacitance tuner to conformally deposit a metal layer on a top surface of the dielectric layer and on an interior surface of the gate trench. The PVD process comprises: (i) tuning the auto capacitance tuner to provide positive radio frequency (RF) bias to the substrate in the PVD chamber for a first time period; and (ii) subsequently tuning the auto capacitance tuner to provide negative RF bias to the substrate in the PVD chamber for a second time period.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A method of electro-chemical plating is disclosed. The catholyte is delivered to the cathode chamber. The catholyte is controlled at a first temperature before flowing into the cathode chamber. The anolyte is provided at room temperature. The temperature of the anolyte is lowered from the room temperature to a second temperature before delivering into the anode chamber. The second temperature is equal to or lower than the first temperature. The plating surface of the substrate is immersed in the electrolyte. The substrate is biased to a direct current (DC) voltage. The biased substrate attracts ions of the metal in the electrolyte toward the plating surface so as to electroplating the metal onto the substrate.

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: Disclosed in the present disclosure are substances having tyrosine kinase inhibitory activity and a preparation method and use thereof, wherein the substances are the compounds having the structure of general formula (I) or the geometric isomers or pharmaceutical salts thereof. Through evaluation on tyrosine kinase inhibitory activity and related experiments, the present disclosure demonstrates that these compounds have a good tyrosine kinase inhibitory activity, and may inhibit a variety of tumor cells, and thus may be developed into drugs for preventing and treating tumor diseases, especially liver cancer, lung cancer and neuroblastoma.

Abstract: Disclosed in the present disclosure are substances having tyrosine kinase inhibitory activity and a preparation method and use thereof, wherein the substances are the compounds having the structure of general formula (I) or the geometric isomers or pharmaceutical salts thereof. Through evaluation on tyrosine kinase inhibitory activity and related experiments, the present disclosure demonstrates that these compounds have a good tyrosine kinase inhibitory activity, and may inhibit a variety of tumor cells, and thus may be developed into drugs for preventing and treating tumor diseases, especially liver cancer, lung cancer and neuroblastoma.

Abstract: The present invention relates to C-Glycosylisoflavones having alkylaminoalkoxyl substituent and pharmaceutically acceptable salts thereof, a process for the preparation thereof, pharmaceutical compositions comprising an effective amount of a compound of the formula (I), and to the use of these compounds or compositions for the treatment or prevention of cardio- and cerebrovascular diseases, in particular for the treatment of various cardiocerebral hypoxic-ischemic diseases, for the treatment or prevention of diabetes mellitus and complications thereof, and for the treatment or prevention of chemical poisoning, in particular alcoholism.

Abstract: The present invention relates to C-Glycosylisoflavones having alkylaminoalkoxyl substituent and pharmaceutically acceptable salts thereof, a process for the preparation thereof, pharmaceutical compositions comprising an effective amount of a compound of the formula (I), and to the use of these compounds or compositions for the treatment or prevention of cardio- and cerebrovascular diseases, in particular for the treatment of various cardiocerebral hypoxic-ischemic diseases, for the treatment or prevention of diabetes mellitus and complications thereof, and for the treatment or prevention of chemical poisoning, in particular alcoholism.