Patents by Inventor Shouguo Zhang

Shouguo Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10954602
    Abstract: A method of electro-chemical plating is disclosed. The catholyte is delivered to the cathode chamber. The catholyte is controlled at a first temperature before flowing into the cathode chamber. The anolyte is provided at room temperature. The temperature of the anolyte is lowered from the room temperature to a second temperature before delivering into the anode chamber. The second temperature is equal to or lower than the first temperature. The plating surface of the substrate is immersed in the electrolyte. The substrate is biased to a direct current (DC) voltage. The biased substrate attracts ions of the metal in the electrolyte toward the plating surface so as to electroplating the metal onto the substrate.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: March 23, 2021
    Assignee: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Shouguo Zhang, Jinggang Li, Yongbo Xu, Xijun Guo, Pao-Chung Lee
  • Patent number: 10510549
    Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.
    Type: Grant
    Filed: December 25, 2017
    Date of Patent: December 17, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shouguo Zhang, Hai Tao Liu, Ming Hua Du, Yen-Chen Chen
  • Publication number: 20190267492
    Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Applicant: United Microelectronics Corp.
    Inventors: Yen-Chen Chen, Xiao Wu, Hai Tao Liu, Ming Hua Du, Shouguo Zhang, Yao-Hung Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: 10340391
    Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: July 2, 2019
    Assignee: United Microelectronics Corp.
    Inventors: Yen-Chen Chen, Xiao Wu, Hai Tao Liu, Ming Hua Du, Shouguo Zhang, Yao-Hung Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Publication number: 20190198334
    Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.
    Type: Application
    Filed: December 25, 2017
    Publication date: June 27, 2019
    Inventors: Shouguo Zhang, Hai Tao Liu, Ming Hua Du, Yen-Chen Chen
  • Publication number: 20190006519
    Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 3, 2019
    Applicant: United Microelectronics Corp.
    Inventors: Yen-Chen Chen, Xiao Wu, Hai Tao Liu, Ming Hua Du, Shouguo Zhang, Yao-Hung Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: 9642839
    Abstract: Disclosed in the present disclosure are substances having tyrosine kinase inhibitory activity and a preparation method and use thereof, wherein the substances are the compounds having the structure of general formula (I) or the geometric isomers or pharmaceutical salts thereof. Through evaluation on tyrosine kinase inhibitory activity and related experiments, the present disclosure demonstrates that these compounds have a good tyrosine kinase inhibitory activity, and may inhibit a variety of tumor cells, and thus may be developed into drugs for preventing and treating tumor diseases, especially liver cancer, lung cancer and neuroblastoma.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: May 9, 2017
    Assignee: Institute of Radiation Medicine, China Academy of Military Medical Sciences Pla
    Inventors: Xiaoming Yang, Lin Wang, Changyan Li, Yiqun Zhan, Jing Liu, Teng Luo, Haiyan Yan, Shouguo Zhang, Wei Li, Xiaoxue Wen, Tao Peng, Lu Li
  • Publication number: 20160151334
    Abstract: Disclosed in the present disclosure are substances having tyrosine kinase inhibitory activity and a preparation method and use thereof, wherein the substances are the compounds having the structure of general formula (I) or the geometric isomers or pharmaceutical salts thereof. Through evaluation on tyrosine kinase inhibitory activity and related experiments, the present disclosure demonstrates that these compounds have a good tyrosine kinase inhibitory activity, and may inhibit a variety of tumor cells, and thus may be developed into drugs for preventing and treating tumor diseases, especially liver cancer, lung cancer and neuroblastoma.
    Type: Application
    Filed: June 20, 2013
    Publication date: June 2, 2016
    Applicant: INSTITUTE OF RADIATION MEDICINE, CHINA ACADEMY OF MILITARY MEDICAL SCIENCES PLA
    Inventors: Xiaoming Yang, Lin Wang, Changyan Li, Yiqun Zhan, Jing Liu, Teng Luo, Haiyan Yan, Shouguo Zhang, Wei Li, Xiaoxue Wen, Tao Peng, Lu Li
  • Patent number: 7727965
    Abstract: The present invention relates to C-Glycosylisoflavones having alkylaminoalkoxyl substituent and pharmaceutically acceptable salts thereof, a process for the preparation thereof, pharmaceutical compositions comprising an effective amount of a compound of the formula (I), and to the use of these compounds or compositions for the treatment or prevention of cardio- and cerebrovascular diseases, in particular for the treatment of various cardiocerebral hypoxic-ischemic diseases, for the treatment or prevention of diabetes mellitus and complications thereof, and for the treatment or prevention of chemical poisoning, in particular alcoholism.
    Type: Grant
    Filed: July 2, 2004
    Date of Patent: June 1, 2010
    Assignees: Hainan Yangpu New & Special Medicine Co., Ltd., Institute of Radiation Medicine, Academy of Military Medical Sciences, PLA
    Inventors: Lin Wang, Qiujun Lu, Shengqi Wang, Tao Peng, Xiaowei Zhu, Shouguo Zhang, Jianping Ren, Lu Li, Ling Han, Yiguang Jin, Fengsheng Che
  • Publication number: 20080293642
    Abstract: The present invention relates to C-Glycosylisoflavones having alkylaminoalkoxyl substituent and pharmaceutically acceptable salts thereof, a process for the preparation thereof, pharmaceutical compositions comprising an effective amount of a compound of the formula (I), and to the use of these compounds or compositions for the treatment or prevention of cardio- and cerebrovascular diseases, in particular for the treatment of various cardiocerebral hypoxic-ischemic diseases, for the treatment or prevention of diabetes mellitus and complications thereof, and for the treatment or prevention of chemical poisoning, in particular alcoholism.
    Type: Application
    Filed: July 2, 2004
    Publication date: November 27, 2008
    Inventors: Lin Wang, Qiujun Lu, Shengqi Wang, Tao Peng, Xiaowei Zhu, Shouguo Zhang, Jianping Ren, Lu Li, Ling Han, Yiguang Jin, Fengsheng Che