Abstract: A semiconductor device includes a first extended semiconductor chip including a first semiconductor chip and an extension extending outwardly from a side surface of the first semiconductor chip. The semiconductor device also includes a second semiconductor chip mounted above the first extended semiconductor chip and electrically connected with the first semiconductor chip. The first extended semiconductor chip includes a first extension electrode pad provided above the extension and electrically connected with an electrode of the first semiconductor chip.

Abstract: A semiconductor package includes a substrate, a semiconductor chip disposed on the substrate, and a connection wiring connected electrically to the semiconductor chip. The semiconductor package further includes a sidewall formed of an insulator, an inner electrode formed on a first surface of the sidewall that faces the substrate, and a sidewall external electrode formed on a second surface of the sidewall different from the first surface. The inner electrode and the sidewall external electrode are connected electrically, and the inner electrode is connected to the connection wiring. With this configuration, it is possible to suppress the semiconductor package from being large due to an increase in the number of sidewall external electrodes formed on the side surfaces of the semiconductor package, and to shorten a connection distance between the semiconductor packages by connecting the sidewall external electrodes.

Abstract: A semiconductor device includes a first extended semiconductor chip including a first semiconductor chip and an extension extending outwardly from a side surface of the first semiconductor chip. The semiconductor device also includes a second semiconductor chip mounted above the first extended semiconductor chip and electrically connected with the first semiconductor chip. The first extended semiconductor chip includes a first extension electrode pad provided above the extension and electrically connected with an electrode of the first semiconductor chip.

Abstract: A semiconductor package includes a substrate, a semiconductor chip disposed on the substrate, and a connection wiring connected electrically to the semiconductor chip. The semiconductor package further includes a sidewall formed of an insulator, an inner electrode formed on a first surface of the sidewall that faces the substrate, and a sidewall external electrode formed on a second surface of the sidewall different from the first surface. The inner electrode and the sidewall external electrode are connected electrically, and the inner electrode is connected to the connection wiring. With this configuration, it is possible to suppress the semiconductor package from being large due to an increase in the number of sidewall external electrodes formed on the side surfaces of the semiconductor package, and to shorten a connection distance between the semiconductor packages by connecting the sidewall external electrodes.

Abstract: The semiconductor device comprises: a tub for supporting a semiconductor chip; a sealing body formed by sealing the semiconductor chip with a resin; a plurality of leads made of a copper alloy, exposed to the back face of the sealing body, and having a soldered layer on the exposed mounted face; and wires for connecting the pads of the semiconductor chip and the corresponding leads. In the manufacture method, the sealing body is polished, after resin-molded, at its back face with a brush to form the two widthwise edge portions, as exposed from the back face of the sealing body, of the lead into rounded faces, and the mounted face of the lead including the rounded faces is protruded at its central portion from the back face of the sealing body thereby to improve the connection reliability at the packaging time.

Abstract: A transmission power control apparatus for outputting a transmission data to be filtered by a band-limiting filter (9), includes: a branching unit (81) for branching transmission data before being entered into the band-limiting filter (9); a peak detecting filter (84) having the same structure as that of the band-limiting filter (9), for entering thereinto one of the transmission data branched by this branching unit (81); units (85 to 89) for calculating a correction value capable of suppressing a power peak of the transmission data by being filtered by this peak detecting filter (84); a delaying unit for delaying the other data of the branched transmission data by time required to calculate the correction value; and a correcting unit (83) for correcting the transmission data delayed by this delaying unit (82) based upon the correction value, and thereafter, for entering the corrected transmission data into the band-limiting filter (9).

Abstract: A limiting method is provided which limits signals having two components I channel and Q channel on two orthogonal coordinate axes within a predetermined range on the coordinate plane specified by the two coordinate axes, wherein the predetermined range is defined by concentric circles having the origin of the two coordinate axes as a center.

Abstract: To improve the connection reliability at the time of packaging a semiconductor device and to make the method management easy in a semiconductor device manufacturing method.

Abstract: To improve the connection reliability at the time of packaging a semiconductor device and to make the method management easy in a semiconductor device manufacturing method. The semiconductor device comprises: a tub 1e for supporting a semiconductor chip 2; a sealing body 3 formed by sealing the semiconductor chip 2 with a resin; a plurality of leads 1a made of a copper alloy, exposed to the back face 3a of the sealing body 3, and having a soldered layer 8 on the exposed mounted face 1d; and wires 4 for connecting the pads 2a of the semiconductor chip 2 and the corresponding leads 1a.

Abstract: The semiconductor device comprises: a tub for supporting a semiconductor chip; a sealing body formed by sealing the semiconductor chip with a resin; a plurality of leads made of a copper alloy, exposed to the back face of the sealing body, and having a soldered layer on the exposed mounted face; and wires for connecting the pads of the semiconductor chip and the corresponding leads. In the manufacture method, the sealing body is polished, after resin-molded, at its back face with a brush to form the two widthwise edge portions, as exposed from the back face of the sealing body, of the lead into rounded faces, and the mounted face of the lead including the rounded faces is protruded at its central portion from the back face of the sealing body thereby to improve the connection reliability at the packaging time.

Abstract: To improve the connection reliability at the time of packaging a semiconductor device and to make the method management easy in a semiconductor device manufacturing method.

Abstract: To improve the connection reliability at the time of packaging a semiconductor device and to make the method management easy in a semiconductor device manufacturing method.

Abstract: The semiconductor device comprises: a tub for supporting a semiconductor chip; a sealing body formed by sealing the semiconductor chip with a resin; a plurality of leads made of a copper alloy, exposed to the back face of the sealing body, and having a soldered layer on the exposed mounted face; and wires for connecting the pads of the semiconductor chip and the corresponding leads. In the manufacture method, the sealing body is polished, after resin-molded, at its back face with a brush to form the two widthwise edge portions, as exposed from the back face of the sealing body, of the lead into rounded faces, and the mounted face of the lead including the rounded faces is protruded at its central portion from the back face of the sealing body thereby to improve the connection reliability at the packaging time.

Abstract: A transmission power control apparatus for outputting a transmission data to be filtered by a band-limiting filter (9), includes: a branching unit (81) for branching transmission data before being entered into the band-limiting filter (9); a peak detecting filter (84) having the same structure as that of the band-limiting filter (9), for entering thereinto one of the transmission data branched by this branching unit (81); units (85 to 89) for calculating a correction value capable of suppressing a power peak of the transmission data by being filtered by this peak detecting filter (84); a delaying unit for delaying the other data of the branched transmission data by time required to calculate the correction value; and a correcting unit (83) for correcting the transmission data delayed by this delaying unit (82) based upon the correction value, and thereafter, for entering the corrected transmission data into the band-limiting filter (9).

Abstract: To improve the connection reliability at the time of packaging a semiconductor device and to make the method management easy in a semiconductor device manufacturing method.