Patents by Inventor Shouichi Sasaki
Shouichi Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8481428Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: November 18, 2011Date of Patent: July 9, 2013Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20120064721Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 8084363Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: February 4, 2009Date of Patent: December 27, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 8084362Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: May 25, 2007Date of Patent: December 27, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 7994058Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: GrantFiled: May 25, 2007Date of Patent: August 9, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20090156007Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: February 4, 2009Publication date: June 18, 2009Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20070232197Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: May 25, 2007Publication date: October 4, 2007Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Publication number: 20050050803Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.Type: ApplicationFiled: October 31, 2002Publication date: March 10, 2005Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
-
Patent number: 6042740Abstract: A composition for forming an electrolyte for a solid electrolytic capacitor having excellent electric properties (capacitance, equivalent series resistance, dielectric loss, impedance, etc.) in a frequency zone ranging from a low frequency to a high frequency, and is capable of easily forming a high yield of the solid electrolytic capacitor having an excellent resistance to stress in the steps and a high thermal resistance, and a solid electrolytic capacitor produced from the electrolyte. The composition comprises (A) an aniline compound, (B) an organic sulfonic acid, (C) water, (D) an organic solvent, and if necessary, (E) a specified compound.Type: GrantFiled: April 23, 1998Date of Patent: March 28, 2000Assignee: Hitachi Chemical Co., Ltd.Inventors: Hideaki Uehara, Toru Yoshikawa, Yan Hu, Shouichi Sasaki, Yasuhiro Yano, Takafumi Doudou