Patents by Inventor Shouichirou SHIRAISHI
Shouichirou SHIRAISHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038791Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: ApplicationFiled: October 10, 2023Publication date: February 1, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11888001Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: GrantFiled: March 31, 2023Date of Patent: January 30, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20230238404Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: ApplicationFiled: March 31, 2023Publication date: July 27, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11688747Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: GrantFiled: June 22, 2021Date of Patent: June 27, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20220328536Abstract: An imaging device (11) includes a plurality of photoelectric converters, a separation portion (22, 23), and a plurality of elements. The photoelectric converter is provided to a semiconductor substrate. The separation portion is provided between pixels (21Gr, 21Gb, 21R, 21B) each including the photoelectric converter, the separation portion extending up to a specified depth from a light entrance surface of the semiconductor substrate, the light entrance surface being on a side on which light enters the semiconductor substrate. The element is provided on an element forming surface that is on a side opposite to the side of the light entrance surface. A first depth is deeper than a second depth, the first depth being a depth of the separation portion (22) provided in a region in which the element is provided, the second depth being a depth of the separation portion (23) provided in a region in which the element is not provided.Type: ApplicationFiled: August 17, 2020Publication date: October 13, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hironobu FUKUI, Shouichirou SHIRAISHI
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Publication number: 20210313362Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: ApplicationFiled: June 22, 2021Publication date: October 7, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11075236Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: GrantFiled: May 28, 2018Date of Patent: July 27, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20200235149Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: ApplicationFiled: May 28, 2018Publication date: July 23, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO