Abstract: A semiconductor device includes a semiconductor layer which has a first surface, and a second surface which is comparatively lower than the first surface. The semiconductor device also has a first material layer formed over the second surface, which includes a first inorganic material which has a hardness exceeding that of the semiconductor layer. The semiconductor device also includes a second material layer which has a hardness less than that of the first material layer, and which is formed in a gap between a sidewall of the first material layer and a sidewall between the first and second surfaces. The first surface of the semiconductor layer is formed by lapping until the first surface of the semiconductor layer is impeded by the first material layer so that the first surface of the semiconductor layer is substantially flush with a top surface of the first material layer.

Abstract: A method for producing a semiconductor device on a semiconductor layer provided on an insulator layer comprises the steps of providing an opening on the semiconductor layer to expose a top surface of the insulator layer, depositing a first material layer that has a hardness exceeding the hardness of the semiconductor layer on the semiconductor layer including the exposed top surface, and patterning the first material layer such that a patterned region of the first inorganic material is left in the opening with a gap separating the patterned region from the side wall of the semiconductor layer.