Patents by Inventor Shoulch Nikzad

Shoulch Nikzad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays
    Patent number: 8828852
    Abstract: Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: September 9, 2014
    Assignee: California Institute of Technology
    Inventors: Michael E. Hoenk, Shoulch Nikzad, Todd J. Jones, Frank Greer, Alexander G. Carver