Patents by Inventor Shouming Zhang

Shouming Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protection device of programmable semiconductor surge suppressor having deep-well structure
    Patent number: 7855399
    Abstract: A protection device of programmable semiconductor surge suppressor having deep-well structure is provided comprising one, two or four protection units, each of which is composed of a PN-junction diode, a PNPN-type thyristor and a NPN-type triode connected with each other. It is characterized in that in the diode area on the frontal side of the N-type semiconductor base is formed a PN junction with impurity concentration changed gradiently from top to bottom according to the order of P+, P, N and N+; and a group of deep-wells with P-type impurities are positioned at the interface of the PN junction, making the PN junction form a concave-convex type interface. The present invention can be used in the program-controlled switchboard to protect the Subscriber Line Interface Circuit (SLIC) board. The above improvement can further improve the anti-lightning and anti-surge performance and the energy discharge capability of the whole device.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: December 21, 2010
    Assignee: Semitel Electronics Co., Ltd.
    Inventors: Walance Sun, Ken Ou, Shouming Zhang, Man Ng
  • Protection device of programmable semiconductor surge suppressor having deep-well structure
    Publication number: 20100181597
    Abstract: A protection device of programmable semiconductor surge suppressor having deep-well structure is provided comprising one, two or four protection units, each of which is composed of a PN-junction diode, a PNPN-type thyristor and a NPN-type triode connected with each other. It is characterized in that in the diode area on the frontal side of the N-type semiconductor base is formed a PN junction with impurity concentration changed gradiently from top to bottom according to the order of P+, P, N and N+; and a group of deep-wells with P-type impurities are positioned at the interface of the PN junction, making the PN junction form a concave-convex type interface. The present invention can be used in the program-controlled switchboard to protect the Subscriber Line Interface Circuit (SLIC) board. The above improvement can further improve the anti-lightning and anti-surge performance and the energy discharge capability of the whole device.
    Type: Application
    Filed: September 25, 2009
    Publication date: July 22, 2010
    Applicant: SEMITEL ELECTRONICS CO., LTD.
    Inventors: Walance Sun, Ken Ou, Shouming Zhang, Man Ng