Abstract: Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.

Abstract: Disclosed is a chemical mechanical polishing solution containing water, cerium oxide, polyacrylic acid and polyether amine. The chemical mechanical polishing solution in this application uses polyether amine as an additive, which can improve the polishing rate of silicon dioxide by negatively charged cerium oxide.

Abstract: The present disclosure provides a chemical mechanical polishing solution comprising cerium oxide particles, an anionic compound, a cationic compound, an inhibitor, and a pH regulator, wherein the inhibitor is a non-ionic polymeric compound; The polishing selectivity ratio of the chemical mechanical polishing solution for the insulation film/polycrystalline silicon is greater than 100. The chemical mechanical polishing solution of the present invention can effectively maintain a high polishing selectivity ratio of the insulation layer to the stop layer, where the stop layer is a polycrystalline silicon stop layer.

Abstract: The present disclosure provides a method for preparing an organic-inorganic nanocomposite particle dispersion, comprising: preparing a negatively charged organic-inorganic nanocomposite particle dispersion: adding positively charged inorganic nanoparticles to an anionic organic polymer solution, stirring thoroughly, dispersing uniformly, and obtaining a negatively charged organic-inorganic nanocomposite particle dispersion; preparing a positively charged organic-inorganic nanocomposite particle dispersion: adding a negatively charged organic polymer inorganic metal oxide composite dispersion to a cationic organic polymer solution, stirring thoroughly, and dispersing uniformly to obtain a positively charged organic polymer inorganic nanocomposite particle dispersion; repeating step (1) and (2) alternately to obtain a dispersion of negatively charged and positively charged organic-inorganic nanocomposites by adjusting the number of step (1) and (2), respectively.

Abstract: Disclosed is a chemical mechanical polishing solution, which contains water, cerium oxide, polyquatemium, carboxylic acid containing a benzene ring and polyvinylamine. The function of auto stop in its true sense can only be achieved by using polyquatemium, carboxylic acid containing a benzene ring and polyvinylamine together. On the blanks, the polishing rates are low, while at the high step heights of patterned silicon chips, high polishing rates are kept. The lower is the step height, the better is the polishing rate inhibited, and thus the function of auto stop is achieved.

Abstract: Disclosed is a chemical mechanical polishing solution containing water, cerium oxide, polyacrylic acid and polyether amine. The chemical mechanical polishing solution in this application uses polyether amine as an additive, which can improve the polishing rate of silicon dioxide by negatively charged cerium oxide.

Abstract: Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.

Abstract: Disclosed is a chemical mechanical polishing solution containing cerium oxide, polyacrylic acid, polyether amine and water. In this invention polyether amine can serve as an additive to reduce the dishing amount of patterned wafer by negatively charged cerium oxide, and improve the efficiency of planarization.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: The invention provides a chemical-mechanical polishing pad comprising a polymeric matrix and 0.1-15 wt. % of metal oxide particles. The polymeric matrix has pores, the metal oxide particles are uniformly distributed throughout the pores, and the metal oxide particles have a specific surface area of about 25 m2/g to about 450 m2/g. The invention further provides a method of polishing a substrate with the polishing pad.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: The invention provides methods for planarizing or polishing a metal surface. The method comprises a composition comprising an abrasive, cesium ions, and a liquid carrier comprising water.

Abstract: The inventive chemical-mechanical polishing composition comprises a liquid carrier, hydrogen peroxide, benzotriazole, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing composition.

Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive, iodate ion, a nitrogen-containing compound selected from the group consisting of a nitrogen-containing C4-20 heterocycle and a C1-20 alkylamine, and a liquid carrier comprising water.

Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.