Patents by Inventor Shouyin Zhang

Shouyin Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11037768
    Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: June 15, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xiaodong Wang, Joung Joo Lee, Fuhong Zhang, Martin Lee Riker, Keith A. Miller, William Fruchterman, Rongjun Wang, Adolph Miller Allen, Shouyin Zhang, Xianmin Tang
  • Publication number: 20210071294
    Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 11, 2021
    Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
  • Patent number: 10157733
    Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: December 18, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shouyin Zhang, Fuhong Zhang, Joung Joo Lee
  • Patent number: 9818584
    Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: November 14, 2017
    Assignee: FEI Company
    Inventors: Thomas G. Miller, Shouyin Zhang
  • Publication number: 20170253959
    Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.
    Type: Application
    Filed: March 3, 2017
    Publication date: September 7, 2017
    Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
  • Publication number: 20170221685
    Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.
    Type: Application
    Filed: January 18, 2017
    Publication date: August 3, 2017
    Inventors: Shouyin ZHANG, Fuhong ZHANG, Joung Joo LEE
  • Patent number: 9691583
    Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.
    Type: Grant
    Filed: July 7, 2015
    Date of Patent: June 27, 2017
    Assignee: FEI Company
    Inventors: Thomas G. Miller, Sean Kellogg, Shouyin Zhang, Mostafa Maazouz, Anthony Graupera
  • Patent number: 9530625
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: December 27, 2016
    Assignee: FEI COMPANY
    Inventors: Sean Kellogg, Anthony Graupera, William N. Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Noel Smith, Shouyin Zhang
  • Publication number: 20150380204
    Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.
    Type: Application
    Filed: July 7, 2015
    Publication date: December 31, 2015
    Inventors: Thomas G. Miller, Sean Kellogg, Shouyin Zhang, Mostafa Maazouz, Anthony Graupera
  • Publication number: 20150357166
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Application
    Filed: June 9, 2015
    Publication date: December 10, 2015
    Applicant: FEI Company
    Inventors: Sean Kellogg, Anthony Graupera, William N. Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Noel Smith, Shouyin Zhang
  • Patent number: 9196451
    Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: November 24, 2015
    Assignee: FEI Company
    Inventors: Shouyin Zhang, Noel Smith, Walter Skoczylas
  • Patent number: 9105438
    Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: August 11, 2015
    Assignee: FEI COMPANY
    Inventors: Tom Miller, Sean Kellogg, Shouyin Zhang, Mostafa Maazouz, Anthony Graupera
  • Patent number: 9053895
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: June 9, 2015
    Assignee: FEI COMPANY
    Inventors: Sean Kellogg, Anthony Graupera, N. William Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Shouyin Zhang, Noel Smith
  • Publication number: 20150008213
    Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.
    Type: Application
    Filed: July 7, 2014
    Publication date: January 8, 2015
    Applicant: FEI Company
    Inventors: Thomas G. Miller, Shouyin Zhang
  • Patent number: 8928210
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: January 6, 2015
    Assignee: FEI Comapny
    Inventors: Sean Kellogg, Anthony Graupera, N. William Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Shouyin Zhang, Noel Smith
  • Patent number: 8736177
    Abstract: An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: May 27, 2014
    Assignee: FEI Company
    Inventor: Shouyin Zhang
  • Patent number: 8723143
    Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: May 13, 2014
    Assignee: FEI Company
    Inventors: Anthony Graupera, Sean Kellogg, Tom Miller, Dustin Laur, Shouyin Zhang, Antonius Bastianus Wilhelmus Dirriwachter
  • Publication number: 20130320229
    Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.
    Type: Application
    Filed: May 10, 2013
    Publication date: December 5, 2013
    Applicant: FEI Company
    Inventors: Tom Miller, Sean Kellogg, Shouyin Zhang, Mostafa Maazouz, Anthony Graupera
  • Publication number: 20130250293
    Abstract: A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber. Preferred embodiments include a spectrometer used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides endpointing means based on spectral analysis to determine when cleaning of the plasma source is completed.
    Type: Application
    Filed: March 20, 2012
    Publication date: September 26, 2013
    Applicant: FEI Company
    Inventors: Mark W. Utlaut, Sean Kellogg, N. William Parker, Anthony Graupera, Shouyin Zhang, Philip Brundage, Doug Kinion
  • Publication number: 20130134855
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Application
    Filed: November 30, 2011
    Publication date: May 30, 2013
    Applicant: FEI Company
    Inventors: Sean Kellogg, Anthony Graupera, N. William Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Shouyin Zhang, Noel Smith