Patents by Inventor Shouyin Zhang
Shouyin Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230402271Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.Type: ApplicationFiled: August 25, 2023Publication date: December 14, 2023Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
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Patent number: 11810770Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.Type: GrantFiled: September 30, 2021Date of Patent: November 7, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Xiaodong Wang, Joung Joo Lee, Fuhong Zhang, Martin Lee Riker, Keith A. Miller, William Fruchterman, Rongjun Wang, Adolph Miller Allen, Shouyin Zhang, Xianmin Tang
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Publication number: 20230130106Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.Type: ApplicationFiled: October 27, 2021Publication date: April 27, 2023Inventors: Sireesh ADIMADHYAM, Shouyin ZHANG
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Publication number: 20220356559Abstract: Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.Type: ApplicationFiled: July 6, 2022Publication date: November 10, 2022Applicant: Applied Materials, Inc.Inventors: Shouyin Zhang, Keith A. Miller
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Publication number: 20220162746Abstract: Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.Type: ApplicationFiled: November 25, 2021Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Shouyin Zhang, Keith A. Miller
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Publication number: 20220020577Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.Type: ApplicationFiled: September 30, 2021Publication date: January 20, 2022Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
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Patent number: 11037768Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.Type: GrantFiled: March 3, 2017Date of Patent: June 15, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Xiaodong Wang, Joung Joo Lee, Fuhong Zhang, Martin Lee Riker, Keith A. Miller, William Fruchterman, Rongjun Wang, Adolph Miller Allen, Shouyin Zhang, Xianmin Tang
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Publication number: 20210071294Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
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Patent number: 10157733Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.Type: GrantFiled: January 18, 2017Date of Patent: December 18, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Shouyin Zhang, Fuhong Zhang, Joung Joo Lee
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Patent number: 9818584Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.Type: GrantFiled: July 7, 2014Date of Patent: November 14, 2017Assignee: FEI CompanyInventors: Thomas G. Miller, Shouyin Zhang
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Publication number: 20170253959Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.Type: ApplicationFiled: March 3, 2017Publication date: September 7, 2017Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
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Publication number: 20170221685Abstract: Embodiments of method for igniting a plasma are provided herein. In some embodiments, a method for igniting a plasma includes: flowing a process gas into a process chamber to increase a pressure within the process chamber to a first pressure; applying a first bias voltage from a collimator power source to a collimator disposed within the process chamber; and applying a second power to a sputtering source disposed in the process chamber above the collimator after the first pressure has been reached and the first bias voltage is applied to ignite the plasma.Type: ApplicationFiled: January 18, 2017Publication date: August 3, 2017Inventors: Shouyin ZHANG, Fuhong ZHANG, Joung Joo LEE
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Patent number: 9691583Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.Type: GrantFiled: July 7, 2015Date of Patent: June 27, 2017Assignee: FEI CompanyInventors: Thomas G. Miller, Sean Kellogg, Shouyin Zhang, Mostafa Maazouz, Anthony Graupera
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Patent number: 9530625Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.Type: GrantFiled: June 9, 2015Date of Patent: December 27, 2016Assignee: FEI COMPANYInventors: Sean Kellogg, Anthony Graupera, William N. Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Noel Smith, Shouyin Zhang
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Publication number: 20150380204Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.Type: ApplicationFiled: July 7, 2015Publication date: December 31, 2015Inventors: Thomas G. Miller, Sean Kellogg, Shouyin Zhang, Mostafa Maazouz, Anthony Graupera
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Publication number: 20150357166Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.Type: ApplicationFiled: June 9, 2015Publication date: December 10, 2015Applicant: FEI CompanyInventors: Sean Kellogg, Anthony Graupera, William N. Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Noel Smith, Shouyin Zhang
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Patent number: 9196451Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.Type: GrantFiled: January 18, 2012Date of Patent: November 24, 2015Assignee: FEI CompanyInventors: Shouyin Zhang, Noel Smith, Walter Skoczylas
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Patent number: 9105438Abstract: Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.Type: GrantFiled: May 10, 2013Date of Patent: August 11, 2015Assignee: FEI COMPANYInventors: Tom Miller, Sean Kellogg, Shouyin Zhang, Mostafa Maazouz, Anthony Graupera
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Patent number: 9053895Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.Type: GrantFiled: November 30, 2011Date of Patent: June 9, 2015Assignee: FEI COMPANYInventors: Sean Kellogg, Anthony Graupera, N. William Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Shouyin Zhang, Noel Smith
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Publication number: 20150008213Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.Type: ApplicationFiled: July 7, 2014Publication date: January 8, 2015Applicant: FEI CompanyInventors: Thomas G. Miller, Shouyin Zhang