Patents by Inventor Shouzou Okada

Shouzou Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5312769
    Abstract: A semiconductor memory device in which a storage electrode of a storage capacitor of a memory cell is formed by a selective chemical vapor deposition (CVD) technique. A lithography process is not required when forming the storage electrode. There is no narrowing of the storage electrode pattern and the minimum distance between adjacent storage electrodes can be made smaller than the minimum wiring dimension. The storage capacitance of the semiconductor memory device can be increased and a high storage capacitance is obtained.
    Type: Grant
    Filed: April 13, 1993
    Date of Patent: May 17, 1994
    Inventors: Naoto Matsuo, Shouzou Okada