Abstract: A semiconductor integrated circuit device includes a gate electrode of at least one of a P-channel MISFET (metal-insulator-semiconductor field-effect transistor) and an N-channel MISFET provided in a direction parallel to a direction of a well isolation boundary phase between the P-channel MISFET and the N-channel MISFET, a first diffusion layer having a same conductivity type as that of a drain diffusion layer of one of a plurality of ones of the MISFET provided in two regions with a drain diffusion layer of the MISFET therebetween through an isolation respectively in a direction orthogonal to the gate electrode, and a second diffusion layer having a conductivity type different from that of the drain diffusion layer of the one of the plurality of ones of the MISFET provided between the well isolation boundary phase and one of a source diffusion layer and the drain diffusion layer.

Abstract: A semiconductor integrated circuit device includes a gate electrode of at least one of a P-channel MISFET (metal-insulator-semiconductor field-effect transistor) and an N-channel MISFET provided in a direction parallel to a direction of a well isolation boundary phase between the P-channel MISFET and the N-channel MISFET, a first diffusion layer having a same conductivity type as that of a drain diffusion layer of one of a plurality of ones of the MISFET provided in two regions with a drain diffusion layer of the MISFET therebetween through an isolation respectively in a direction orthogonal to the gate electrode, and a second diffusion layer having a conductivity type different from that of the drain diffusion layer of the one of the plurality of ones of the MISFET provided between the well isolation boundary phase and one of a source diffusion layer and the drain diffusion layer.

Abstract: A MISFET includes a drain diffusion layer of a first conductivity type, a source diffusion layer of the first conductivity type, a gate electrode, and a substrate/well of a second conductivity type. In the MISFET, first diffusion layers of the first conductivity type are provided at two or more positions at predetermined intervals with an isolation therebetween respectively. The two or more positions are facing at least two sides of the element isolation insulation around the drain diffusion layer. A second diffusion layer of the second conductivity type is provided so as to be close to or to come in contact with the source diffusion layer.

Abstract: A semiconductor integrated circuit device includes a first field-effect transistor and a second field-effect transistor, each of the first field-effect transistor and the second field-effect transistor having a gate electrode formed as a ring shape, a drain diffusion layer formed inside the gate electrode and a source diffusion layer formed outside the gate electrode and a substrate potential diffusion layer or a well potential diffusion layer disposed to contact each of the source diffusion layers of the first and the second field-effect transistors of the same conductivity type, the substrate potential diffusion layer or the well potential diffusion layer being formed with a semiconductor of a different conductivity type from the source diffusion layer.

Abstract: A MISFET includes a drain diffusion layer of a first conductivity type, a source diffusion layer of the first conductivity type, a gate electrode, and a substrate/well of a second conductivity type. In the MISFET, first diffusion layers of the first conductivity type are provided at two or more positions at predetermined intervals with an isolation therebetween respectively. The two or more positions are facing at least two sides of the element isolation insulation around the drain diffusion layer. A second diffusion layer of the second conductivity type is provided so as to be close to or to come in contact with the source diffusion layer.

Abstract: A semiconductor integrated circuit device includes a first and a second field-effect transistors having a gate electrode formed as a ring shape, a drain diffusion layer formed inside the gate electrode and a source diffusion layer formed outside the gate electrode and a substrate potential diffusion layer or a well potential diffusion layer disposed to contact each of the source diffusion layers of the first and the second field-effect transistors of the same conductivity type, the substrate potential diffusion layer or the well potential diffusion layer being formed with a semiconductor of a different conductivity type from the source diffusion layer. Different signals are input to each of the gate electrodes, the substrate potential diffusion layer or the well potential diffusion layer are formed between the source diffusion layer of the first field-effect transistor and the source diffusion layer of the second field-effect transistor.

Abstract: The present invention provides a semiconductor memory device capable of checking operation in the worst case in address combinations, and its manufacturing method. Specific data for test are written into a memory cell array 30. Then, a test signal TE1 is set “1” to set a device in a test mode. Refresh addresses for test are then stored in a data store circuit 51. A first address for test is applied to an address terminal 21, whereby a normal read or write operation is accomplished based on the first address for test. A second address for test is applied to the address terminal 21, whereby a refresh operation is accomplished based on the address for test, and subsequently another normal read or write operation is accomplished based on the second address for test. Data of the memory cell array 30 are checked to decide the presence or absence of any abnormality.

Abstract: The present invention provides a semiconductor memory device capable of checking operation in the worst case in address combinations, and its manufacturing method. Specific data for test are written into a memory cell array 30. Then, a test signal TE1 is set “1” to set a device in a test mode. Refresh addresses for test are then stored in a data store circuit 51. A first address for test is applied to an address terminal 21, whereby a normal read or write operation is accomplished based on the first address for test. A second address for test is applied to the address terminal 21, whereby a refresh operation is accomplished based on the address for test, and subsequently another normal read or write operation is accomplished based on the second address for test. Data of the memory cell array 30 are checked to decide the presence or absence of any abnormality.

Abstract: A semiconductor memory enables establishment of intermediate electric potential of bus line to be implemented without flowing through current between a power-supply and ground. When a read-bus line `RB` is of `Low` state, high-pulse is outputted as an internal pulse signal `RBEQ`, then `N`-type transistor N2 and `P`-type transistor P2 become `ON` state. Further, also `N`-type transistor N5 becomes `ON` state. Then, `N`-type transistor N3 becomes `OFF` state, `N`-type transistor N4 becomes `ON` state, also `P`-type transistors P3, and P4 become `ON` state. According to this situation, output of an inverter I2 becomes `Low`, `P`-type transistor P1 becomes `ON` state, `N`-type transistor N1 becomes `OFF` state, thus electric potential of the read-bus line `RB` changes into `High` from `Low`. Subsequently, it makes signal `RBEQ` `Low`, then, `P`-type transistor P2 and `N`-type transistor N2 become `OFF` state so that the read-bus line `RB` maintains intermediate potential level.

Abstract: A semiconductor memory is provided with a memory cell, a driver circuit driving the memory cell, a first word line and a second word line. The first word line is connected to the driver circuit and transmits a first potential and a second potential outputted by the driver circuit to the memory cell. The second word line is connected to the driver circuit and transmits the first potential and the second potential to the memory cell. The second word line has a resistance higher than that of the first word line. In this way, even if a word line is broken, a multiple selection phenomenon is not incurred.