Patents by Inventor Show Wang

Show Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8284193
    Abstract: A system, method, and computer program for preserving design intent of a Non-Uniform Rational B-spline (NURBS) surface without representation of a parent surface, comprising representing an output surface having control points that is independent from a refinement of the surface; interpolating a base surface from the output surface; calculating a delta vector that is a difference between the output surface and the base surface; and transforming the delta vector based upon a local coordinate system of a normal vector and a tangent plane of the base surface and appropriate means and computer-readable instructions.
    Type: Grant
    Filed: June 26, 2008
    Date of Patent: October 9, 2012
    Assignee: Siemens Product Lifecycle Management Software Inc.
    Inventors: Joerg Hanisch, Lian Fang, Show Wang
  • Publication number: 20090048812
    Abstract: A system, method, and computer program for preserving design intent of a Non-Uniform Rational B-spline (NURBS) surface without representation of a parent surface, comprising representing an output surface having control points that is independent from a refinement of the surface; interpolating a base surface from the output surface; calculating a delta vector that is a difference between the output surface and the base surface; and transforming the delta vector based upon a local coordinate system of a normal vector and a tangent plane of the base surface and appropriate means and computer-readable instructions.
    Type: Application
    Filed: June 26, 2008
    Publication date: February 19, 2009
    Inventors: Joerg Hanisch, Lian Fang, Show Wang
  • Patent number: 6515315
    Abstract: A method for designing an avalanche photodiode for high bit rate or high speed applications is disclosed. The photodiode is made up of a multiplication layer of a first semiconductor material, an absorption layer of a second semiconductor material and a field control layer of a third semiconductor material having. The field control layer has a moderate doping of a first type dopant and is intermediate between the multiplication and absorption layers. A central region of the multiplication layer is diffused with a second type dopant which results in a diffused region having a greater thickness in the center than in the periphery of the diffused region.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: February 4, 2003
    Assignee: JDS Uniphase, Corp.
    Inventors: Mark A. Itzler, Chen Show Wang, Nicholos J. Codd, Suzanne McCoy