Patents by Inventor Shozo Nagano

Shozo Nagano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Physical vapor deposition target
    Patent number: 6797079
    Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.
    Type: Grant
    Filed: February 14, 2001
    Date of Patent: September 28, 2004
    Assignee: Honeywell International Inc.
    Inventors: Shozo Nagano, Hinrich Hargarter, Jianxing Li, Jane Buehler
  • Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
    Patent number: 6758920
    Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.
    Type: Grant
    Filed: February 14, 2001
    Date of Patent: July 6, 2004
    Assignee: Honeywell International Inc.
    Inventors: Shozo Nagano, Hinrich Hargarter, Jianxing Li, Jane Buehler
  • Physical vapor deposition targets
    Publication number: 20020014289
    Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.
    Type: Application
    Filed: February 14, 2001
    Publication date: February 7, 2002
    Inventors: Shozo Nagano, Hinrich Hargarter, Jianxing Li, Jane Buehler
  • Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
    Publication number: 20010035237
    Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.
    Type: Application
    Filed: February 14, 2001
    Publication date: November 1, 2001
    Inventors: Shozo Nagano, Hinrich Hargarter, Jianxing Li, Jane Buehler
  • Physical vapor deposition target
    Publication number: 20010035238
    Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.
    Type: Application
    Filed: February 14, 2001
    Publication date: November 1, 2001
    Inventors: Shozo Nagano, Hinrich Hargarter, Jianxing Li, Jane Buehler