Abstract: The present invention provides a new phosphor with a controllable emission wavelength without using a number of rare and expensive raw materials in forming the composition. The phosphor includes a compound including a fluorescent ion and having a garnet structure including a rare earth element, aluminum, and oxygen. The compound has such a composition that a combination of the rare earth element and the aluminum of the compound is partially replaced with a combination of alkaline earth metal and zirconium (Zr) or alkaline earth metal and hafnium (Hf).

Abstract: Provided is a rare earth phosphovanadate phosphor that is excellent in emission characteristics and preferred also from the viewpoint of industrial production, and a production method thereof. The rare earth phosphovanadate phosphor includes at least a primary particle in which a linear uneven pattern including a plurality of ridge lines parallel to each other is formed on the surface of the particle. Further, the method for producing a rare earth phosphovanadate phosphor involves generating a mixture of a rare earth phosphovanadate phosphor and an alkali metal vanadate, and removing the alkali metal vanadate.

Abstract: The present invention provides a new phosphor with a controllable emission wavelength without using a number of rare and expensive raw materials in forming the composition. The phosphor includes a compound including a fluorescent ion and having a garnet structure including a rare earth element, aluminum, and oxygen. The compound has such a composition that a combination of the rare earth element and the aluminum of the compound is partially replaced with a combination of alkaline earth metal and zirconium (Zr) or alkaline earth metal and hafnium (Hf).

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce3+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce3+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2?a/(a+b)?0.95, 0.05?b/(b+c)?0.8, and 0.4?c/(c+a)?0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce3+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2?a/(a+b)?0.95, 0.05?b/(b+c)?0.8, and 0.4?c/(c+a)?0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract: The semiconductor light emitting device of the present invention emits a blue light component, a green light component, and a red light component. The blue light component is a light component emitted by a first solid light emitting element that emits light having an emission peak in a wavelength range of 430 nm to less than 490 nm, the green light component is light emitted by a second solid light emitting element that emits light having an emission peak in a wavelength range of 360 nm to less than 420 nm that is converted into wavelength-converted light by a green phosphor, and the red light component is light emitted by at least one solid light emitting element selected from the first solid light emitting element and the second solid light emitting element that is converted into wavelength-converted light by a red phosphor. The green phosphor emits green light on the basis of an electronic energy transition of Mn2+.

Abstract: The present invention provides a plasma display device that has light emission properties with short persistence where green light has a persistence time of 3.5 msec or less, that is excellent in luminance, luminance degradation resistance, and color tone, and that is suitable for, for example, a stereoscopic image display device.

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2?a/(a+b)?0.95, 0.05?b/(b+c)?0.8, and 0.4?c/(c+a)?0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2?a/(a+b)?0.95, 0.05?b/(b+c)?0.8, and 0.4?c/(c+a)?0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2?a/(a+b)?0.95, 0.05?b/(b+c)?0.8, and 0.4?c/(c+a)?0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2?a/(a+b)?0.95, 0.05?b/(b+c)?0.8, and 0.4?c/(c+a)?0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract: A protective layer of a plasma display panel includes a base layer formed on a dielectric layer, and a plurality of aggregated particles dispersed on an entire surface of the base layer. Phosphor layers include a green phosphor layer containing an Mn2+ activated short persistent green phosphor whose 1/10 afterglow time exceeds 2 msec and stays below 5 msec, and a Ce3+ activated green phosphor or an Eu2+ activated green phosphor having a luminescence peak in a wavelength region of at least 490 nm to less than 560 nm.

Abstract: The present invention provides a plasma display device that has light emission properties with short persistence where green light has a persistence time of 3.5 msec or less, that is excellent in luminance, luminance degradation resistance, and color tone, and that is suitable for, for example, a stereoscopic image display device.

Abstract: A plasma display device has a plasma display panel including phosphor layers 35 which emits light through electric discharge to output blue, green, and red lights, wherein at least one of the green light and the red light is a wavelength-converted light which is a light emitted from a first phosphor and wavelength-converted by a second phosphor, the first phosphor is a phosphor selected from a plurality of phosphors having an emission peak in a wavelength region ranging from at least 200 nm to less than 600 nm, the second phosphor used to emit the green light is a green phosphor having an emission peak in a wavelength region ranging from at least 500 nm to less than 560 nm, and the second phosphor used to emit the red light is a red phosphor having an emission peak in a wavelength region ranging from at least 600 nm to less than 780 nm.

Abstract: A light emitting device includes: a first semiconductor light emitting element having a solid-state blue light emitting element that emits blue light with a light emission peak in a wavelength range from 420 nm to less than 480 nm, and a first red phosphor layer that covers the solid-state blue light emitting element and includes a first red phosphor that emits red light with a light emission peak in a wavelength range from 600 nm to less than 680 nm; and a second semiconductor light emitting element having a solid-state green light emitting element that emits green light with a light emission peak in a wavelength range from 500 nm to less than 550 nm, and a second red phosphor layer that covers the solid-state green light emitting element and includes a second red phosphor that emits red light with a light emission peak in a wavelength range from 600 nm to less than 680 nm.

Abstract: The semiconductor light emitting device of the present invention emits a blue light component, a green light component, and a red light component. The blue light component is a light component emitted by a first solid light emitting element that emits light having an emission peak in a wavelength range of 430 nm to less than 490 nm, the green light component is light emitted by a second solid light emitting element that emits light having an emission peak in a wavelength range of 360 nm to less than 420 nm that is converted into wavelength-converted light by a green phosphor, and the red light component is light emitted by at least one solid light emitting element selected from the first solid light emitting element and the second solid light emitting element that is converted into wavelength-converted light by a red phosphor. The green phosphor emits green light on the basis of an electronic energy transition of Mn2+.

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.