Abstract: A semiconductor manufacturing method includes purging a growth chamber including a reaction product, a treatment chamber, and a glove box hermetically surrounding the growth chamber, with an inert gas atmosphere. The method also includes transferring the reaction product from the growth chamber to the treatment chamber, followed by moistening the reaction product in the treatment chamber, and extracting the moistened reaction product into the atmosphere.

Abstract: According to an aspect of the embodiment, there is provided a semiconductor manufacturing method comprises: purging a growth chamber including a reaction product, a treatment chamber, and a glove box hermetically surrounding the growth chamber, with an inert gas atmosphere; transferring the reaction product from the growth chamber to the treatment chamber, followed by moistening the reaction product in the treatment chamber; and extracting the moistened reaction product into the atmosphere.

Abstract: A compound semiconductor light emitting element has a unique SCH structure having InGaN graded layers with a gradiunt in content of In interposed between an InGaN active layer and AlGaN cladding layers to ensure a good crystallographic property of the active layer, to maintain and hetero interfaces on and above the active layer in a good condition and to prevent fluctuation in thickness of the active layer, so that a compound semiconductor light emitting element with a high emission efficiency and reliability or a laser element with a high slope efficiency and reliability be obtained. The InGaN graded layers with gradually changed In compositions can be made by increasing or decreasing the temperature while maintaining the supply amount or the ratio of the In source material relative to the supply amount of the other group III source materials in a constant value.

Abstract: A manufacturing method for high quality GaN-based light emitting devices. The method enable effective growth of an Al.sub.y Ga.sub.1-y N (0.ltoreq.y.ltoreq.1) layer on an In.sub.x Ga.sub.1- N (0.ltoreq.x.ltoreq.1) layer by CVD. While holding or increasing the temperature after growing the InGaN layer at the temperature of T0 before growing the AlGaN at the temperature of T1 (T0.ltoreq.T1) in an atmosphere including a source of group V of elements, the present invention applies an inert gas as the carrier gas which includes a source of the group V elements. Therefore, the concentration of group V elements near the surface of the InGaN layer increases and the sublimation of the InGaN layer is prevented by increasing the steam pressure of the group V elements near the surface of the InGaN layer.

Abstract: In a semiconductor light-emitting element having a double hetero junction structure of an InGaAP system an n-type dopant, which does not change a crystal structure, is doped in an In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P(0.ltoreq.x<1, y.perspectiveto.0.5) active layer, so that an n-type active layer (4), is formed between a p-type InGaAlP cladding layer (5), which has band-gap energy that is larger than that of the active layer (4), and an n-type InGaAlP cladding layer (3), thereby preventing the dopant of the P-type InGaAlP cladding layer (3) from being dispersed into the active layer (4). Thus, the oscillation wavelength of the light-emitting element is not shifted to a short wavelength, and the threshold current of the oscillation is not increased thereby providing an element which can improve yield and reliance.