Abstract: A solar cell with high-reflectivity region and narrow etch mark is disclosed. The solar cell includes a semiconductor substrate having a first surface and a second surface, a low-reflectivity region in and on the semiconductor substrate, and an annular etch mark disposed on the first surface and surrounding the low-reflectivity region. The etch mark is located along the perimeter of the first surface and has an average width that is not greater than 2 mm. The second surface is a surface with high reflectivity.

Abstract: A solar cell includes a semiconductor substrate with a first surface and a second surface, a doped emitter layer on the first surface, at least one front anti-reflection coating (ARC) on the first surface, a front electrode on the front ARC, a passivation layer on the second surface, a first rear ARC on the passivation layer, a second rear ARC on the first rear ARC, a third rear ARC on the second rear ARC, and a rear electrode on the third rear ARC. The first rear ARC has a refractive index that is smaller than 2.1, while the second rear ARC has a refractive index that is greater than or equal to 2.1. The second rear ARC has a refractive index that is greater than that of the third rear ARC.

Abstract: A solar cell is disclosed, which includes: a semiconductor substrate, an anti-reflective layer, a passivation layer, a back electrode and back bus bar. The semiconductor substrate has a first surface and a second surface. The anti-reflective layer is disposed on the first surface. The back electrode is a continuous electrode or a flat electrode overlapping the whole back side of the solar cell. The continuous electrode or the flat electrode connects to the semiconductor substrate through a continuous opening. In another embodiment, the continuous electrode is passing through the passivation layer directly and connecting to the semiconductor substrate. That is, the solar cell includes a continuous opening or a continuous electrode.