Patents by Inventor Shr-Tsai Huang

Shr-Tsai Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structures and methods for reading out non-volatile memory using referencing cells
    Patent number: 8274828
    Abstract: The structures and methods of reading out semiconductor Non-Volatile Memory (NVM) using referencing cells are disclosed. The new invented scheme can reduce large current consumption from the direct current biasing in the conventional scheme and achieve a high resolution on the cell threshold voltage with a good sensing speed.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: September 25, 2012
    Assignee: FS Semiconductor Corp., Ltd.
    Inventors: Lee Z. Wang, Shr-Tsai Huang
  • STRUCTURES AND METHODS FOR READING OUT NON-VOLATILE MEMORY USING REFERENCING CELLS
    Publication number: 20120155177
    Abstract: The structures and methods of reading out semiconductor Non-Volatile Memory (NVM) using referencing cells are disclosed. The new invented scheme can reduce large current consumption from the direct current biasing in the conventional scheme and achieve a high resolution on the cell threshold voltage with a good sensing speed.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 21, 2012
    Inventors: Lee Z. WANG, Shr-Tsai Huang