Patents by Inventor Shri Ramaswami

Shri Ramaswami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Imaging array having photodiodes with different light sensitivities and associated image restoration methods
    Patent number: 9942495
    Abstract: A pixel sensor array includes a plurality of pixel sensors having a first gain and a plurality of pixel sensors having a second gain less than the first gain.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: April 10, 2018
    Assignee: Foveon, Inc.
    Inventors: Rastislav Lukac, Shri Ramaswami, Sanghoon Bae
  • IMAGING ARRAY HAVING PHOTODIODES WITH DIFFERENT LIGHT SENSITIVITIES AND ASSOCIATED IMAGE RESTORATION METHODS
    Publication number: 20160073046
    Abstract: A pixel sensor array includes a plurality of pixel sensors having a first gain and a plurality of pixel sensors having a second gain less than the first gain.
    Type: Application
    Filed: November 16, 2015
    Publication date: March 10, 2016
    Inventors: Rastislav Lukac, Shri Ramaswami, Sanghoon Bae
  • Imaging array having photodiodes with different light sensitivities and associated image restoration methods
    Patent number: 9191556
    Abstract: A pixel sensor array includes a plurality of pixel sensors having a first gain and a plurality of pixel sensors having a second gain less than the first gain.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: November 17, 2015
    Assignee: Foveon, Inc.
    Inventors: Rastislav Lukac, Shri Ramaswami, Sanghoon Bae
  • IMAGING ARRAY HAVING PHOTODIODES WITH DIFFERENT LIGHT SENSITIVITIES AND ASSOCIATED IMAGE RESTORATION METHODS
    Publication number: 20130027591
    Abstract: A pixel sensor array includes a plurality of pixel sensors having a first gain and a plurality of pixel sensors having a second gain less than the first gain.
    Type: Application
    Filed: July 16, 2012
    Publication date: January 31, 2013
    Inventors: Rastislav Lukac, Shri Ramaswami, Sanghoon Bae
  • CMOS pixel sensor with depleted photocollectors and a depleted common node
    Patent number: 8039916
    Abstract: An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: October 18, 2011
    Assignee: Foveon, Inc.
    Inventors: Richard B. Merrill, Shri Ramaswami, Glenn J. Keller
  • CMOS PIXEL SENSOR WITH DEPLETED PHOTOCOLLECTORS AND A DEPLETED COMMON NODE
    Publication number: 20110057238
    Abstract: An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
    Type: Application
    Filed: November 11, 2010
    Publication date: March 10, 2011
    Inventors: Richard B. Merrill, Shri Ramaswami, Glenn J. Keller
  • CMOS pixel sensor with depleted photocollectors and a depleted common node
    Patent number: 7834411
    Abstract: An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
    Type: Grant
    Filed: May 15, 2007
    Date of Patent: November 16, 2010
    Assignee: Foveon, Inc.
    Inventors: Richard B. Merrill, Shri Ramaswami, Glenn J. Keller
  • CMOS PIXEL SENSOR WITH DEPLETED PHOTOCOLLECTORS AND A DEPLETED COMMON NODE
    Publication number: 20080283880
    Abstract: An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
    Type: Application
    Filed: May 15, 2007
    Publication date: November 20, 2008
    Applicant: FOVEON, INC.
    Inventors: Richard B. Merrill, Shri Ramaswami, Glenn J. Keller