Abstract: A semiconductor device package includes a semiconductor die having two largest dimensions that define a major plane, a packaging material enclosing the semiconductor die, a plurality of contacts on a first exterior surface of the semiconductor device package that is parallel to the major plane, the first exterior surface defining a bottom of the semiconductor device package, and a pedestal of semiconductor material above the semiconductor die in a thermally-conductive, electrically non-conductive relationship with the semiconductor die. The semiconductor material of the pedestal may be doped to provide electromagnetic shielding of the semiconductor die.

Abstract: Embodiments relate to a die package featuring a sputtered metal shield to reduce Electro-Magnetic Interference (EMI). According to a particular embodiment, a die featuring a top surface exposed by surrounding Molded Underfill (MUF) material, is subjected to metal sputtering. The resulting sputtered metal shield is in direct physical and thermal contact with the die, and is in electrical contact with a substrate supporting the die (e.g., to provide shield grounding). Specific embodiments may be particularly suited to reducing the EMI of a package containing an electro-optic die, to between 3-15 dB. The conformal nature and small thickness of the sputtered metal shield desirably conserves space and reduces package footprint. Direct physical contact between the shield and the die surface exposed by the MUF, enhances thermal communication (e.g., reducing junction temperature). According to certain embodiments, the sputtered metal shield comprises a stainless steel liner, copper, and a stainless steel coating.

Abstract: A semiconductor device package includes a semiconductor die having two largest dimensions that define a major plane, a packaging material enclosing the semiconductor die, a plurality of contacts on a first exterior surface of the semiconductor device package that is parallel to the major plane, the first exterior surface defining a bottom of the semiconductor device package, and a pedestal of semiconductor material above the semiconductor die in a thermally-conductive, electrically non-conductive relationship with the semiconductor die. The semiconductor material of the pedestal may be doped to provide electromagnetic shielding of the semiconductor die.