Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: The present invention discloses an integrated choke assembly comprising: a base having a main body structure, a first protruding part and a second protruding part. A first choke has a first magnetic core and a first winding, wherein the first protruding part is arranged through the first opening of the first magnetic core so that the first choke is arranged on the upper surface of the main body structure, and the first winding is wound on the first magnetic core. A second choke has a second magnetic core and a second winding, wherein the second protruding part is arranged through the second opening of the second magnetic core so that the second choke is arranged on the lower surface of the main body structure, and the second winding is wound on the second magnetic core.