Abstract: A 2D layered thin film structure is disclosed. The 2D layered thin film structure can be applied to the growth of monocrystalline or polycrystalline group III nitrides and other 2D materials. The 2D layered thin film structure can be easily separated from the 2D layered thin film structure growth substrate, so that a single or composite nanopillar array structure formed by the monocrystalline or polycrystalline group III nitride or other 2D materials, or the 2D layered thin film structure can be transferred to any other substrate. In addition, the 2D layered thin film structure has excellent light transmittance, flexibility and component integration.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A transparent display panel with driving electrode regions, circuit wiring regions, and optically transparent regions is provided. The driving electrode regions are arranged into an array in a first direction and a second direction. An average light transmittance of the circuit wiring regions is less than ten percent, and an average light transmittance of the optically transparent regions is greater than that of the driving electrode regions and the circuit wiring regions. The first direction intersects the second direction. The circuit wiring regions connect the driving electrode regions at intervals, such that each optically transparent region spans among part of the driving electrode regions. The transparent display panel includes first signal lines and second signal lines extending along the circuit wiring regions, and each circuit wiring region is provided with at least one of the first signal lines and at least one of the second signal lines.

Abstract: A solid state storage system, and method of operation thereof, including: a system interface configured to receive host commands; a controller, coupled to the system interface, configured to identify frequently read data blocks from the host commands; a non-volatile memory, coupled to the controller, configured for access of the frequently read data blocks; an error correction code unit, coupled to the controller, configured to provide health monitor parameters for the frequently read data blocks verified by the controller; and a redundant frequently read data (RFRD) area, coupled to the error correction code unit, configured to transfer a recovered data from the frequently read data blocks.

Abstract: Approaches, techniques, and mechanisms are disclosed for improving data retention using a virtual timer. A memory controller may use a raw bit error rate (RBER) to find an equivalent temperature-accelerated data age of a data item. The data age is computed by using the initial RBER of virtual timing data (VTD) as a virtual write in time of the data item compared to a present time using the current RBER of the VTD. When the data age is determined to exceed a data retention threshold, a data refresh is performed on the data item at the memory block on the memory device. The data age may be stored as virtual timing data on the memory block.

Abstract: A solid state storage system, and method of operation thereof, including: a system interface configured to receive host commands; a controller, coupled to the system interface, configured to identify frequently read data blocks from the host commands; a non-volatile memory, coupled to the controller, configured for access of the frequently read data blocks; an error correction code unit, coupled to the controller, configured to provide health monitor parameters for the frequently read data blocks verified by the controller; and a redundant frequently read data (RFRD) area, coupled to the error correction code unit, configured to transfer a recovered data from the frequently read data blocks.

Abstract: Approaches, techniques, and mechanisms are disclosed for improving data retention using a virtual timer. A memory controller may use a raw bit error rate (RBER) to find an equivalent temperature-accelerated data age of a data item. The data age is computed by using the initial RBER of virtual timing data (VTD) as a virtual write in time of the data item compared to a present time using the current RBER of the VTD. When the data age is determined to exceed a data retention threshold, a data refresh is performed on the data item at the memory block on the memory device. The data age may be stored as virtual timing data on the memory block.

Abstract: A solid state storage system, and method of operation thereof, including: a system interface configured to receive host commands; a controller, coupled to the system interface, configured to identify frequently read data blocks from the host commands; a non-volatile memory, coupled to the controller, configured for access of the frequently read data blocks; an error correction code unit, coupled to the controller, configured to provide health monitor parameters for the frequently read data blocks verified by the controller; and a redundant frequently read data (RFRD) area, coupled to the error correction code unit, configured to transfer a recovered data from the frequently read data blocks.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first dielectric layer and a first conductive structure over a substrate. The first dielectric layer surrounds the first conductive structure. The method includes forming a second dielectric layer over the first dielectric layer. The second dielectric layer has an opening exposing the first conductive structure. The method includes forming a seal layer over the first conductive structure and an inner wall of the opening. The seal layer is in direct contact with the first dielectric layer and the second dielectric layer, and the seal layer includes a dielectric material comprising an oxygen compound. The method includes removing the seal layer over the first conductive structure. The method includes filling a second conductive structure into the opening.

Abstract: A solid state storage system, and method of operation thereof, including: a system interface configured to receive host commands; a controller, coupled to the system interface, configured to identify frequently read data blocks from the host commands; a non-volatile memory, coupled to the controller, configured for access of the frequently read data blocks; an error correction code unit, coupled to the controller, configured to provide health monitor parameters for the frequently read data blocks verified by the controller; and a redundant frequently read data (RFRD) area, coupled to the error correction code unit, configured to transfer a recovered data from the frequently read data blocks.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first dielectric layer and a first conductive structure over a substrate. The first dielectric layer surrounds the first conductive structure. The method includes forming a second dielectric layer over the first dielectric layer. The second dielectric layer has an opening exposing the first conductive structure. The method includes forming a seal layer over the first conductive structure and an inner wall of the opening. The seal layer is in direct contact with the first dielectric layer and the second dielectric layer, and the seal layer includes a dielectric material comprising an oxygen compound. The method includes removing the seal layer over the first conductive structure. The method includes filling a second conductive structure into the opening.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate. The first dielectric layer has a first opening exposing the first conductive structure. The semiconductor device structure includes a seal layer covering an inner wall of the first opening and in direct contact with the first dielectric layer. The seal layer includes a dielectric material including an oxygen compound. The semiconductor device structure includes a second conductive structure filled in the first opening and surrounded by the seal layer. The second conductive structure is electrically connected to the first conductive structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate. The first dielectric layer has a first opening exposing the first conductive structure. The semiconductor device structure includes a seal layer covering an inner wall of the first opening and in direct contact with the first dielectric layer. The seal layer includes a dielectric material including an oxygen compound. The semiconductor device structure includes a second conductive structure filled in the first opening and surrounded by the seal layer. The second conductive structure is electrically connected to the first conductive structure.

Abstract: A NAND flash circuit structure includes two select gates disposed on a substrate, and an even number of spaced-apart word lines disposed between the two select gates. The select gate is provided with a first portion and a second portion. The thickness of the first portion and the second portion are different.

Abstract: A semiconductor circuit structure and process of making the same is provided in the present invention, comprising the steps of providing a substrate having a target layer and a hard mask layer, forming a patterned small core body group and a large core body group on the hard mask layer, forming a spacer material layer conformally on the substrate and the core body groups, forming filling bodies in each recess of the spacer material layer, performing a first etching process to remove exposed spacer material layer, using the filling bodies as a mask to perform a second etching process for patterning the hard mask layer, and using the patterned hard mask layer as a mask to perform a third etching process for patterning the conductive layer.