Abstract: Semiconductor package structures and methods for manufacturing the same are provided. The semiconductor package structure comprises a substrate unit and a first chip stack structure. The substrate unit comprises a circuit structure having test pads. The first chip stack structure comprises chips, and each of the chips has a plurality of through silicon plugs. The through silicon plugs of two adjacent chips are electrically connected and further electrically connected to the test pads of the substrate unit for electrical testing. Another semiconductor package structure provided by the present invention comprises a first semiconductor chip and a second semiconductor chip. Each of the semiconductor chips has test pads for electrical testing and a plurality of through silicon plugs connecting to the test pads. The second semiconductor chip is mounted on the first semiconductor chip, and a portion of the through silicon plugs of two semiconductor chips are electrically connected with each other.

Abstract: A method for preparing a carbon/carbon (C/C) composite comprising carbonizing a carbon fiber-reinforced polymer matrix composite precursor by heating the precursor in an inert atmosphere with a heating rate greater than 20° C./min up to 1500° C./min.

Abstract: Semiconductor package structures and methods for manufacturing the same are provided. The semiconductor package structure comprises a substrate unit and a first chip stack structure. The substrate unit comprises a circuit structure having test pads. The first chip stack structure comprises chips, and each of the chips has a plurality of through silicon plugs. The through silicon plugs of two adjacent chips are electrically connected and further electrically connected to the test pads of the substrate unit for electrical testing. Another semiconductor package structure provided by the present invention comprises a first semiconductor chip and a second semiconductor chip. Each of the semiconductor chips has test pads for electrical testing and a plurality of through silicon plugs connecting to the test pads. The second semiconductor chip is mounted on the first semiconductor chip, and a portion of the through silicon plugs of two semiconductor chips are electrically connected with each other.

Abstract: A conductive structure of a chip is provided. The conductive structure comprises a ground layer, a dielectric layer, a redistribution layer, an under bump metal and a solder bump. The ground layer electrically connects to the ground pad of the chip, while the dielectric layer overlays the ground layer. Thus, the conductive layer can result in impedance matching, and the packaged chip is adapted to transmit a high frequency signal.

Abstract: A conductive structure of a chip and a method for manufacturing the conductive structure are provided. An under bump metal (UBM) is formed on the redistribution layer (RDL) by performing an electroless plating process. Subsequently, the solder bump is formed on the under bump metal for electrical connection. Thus, the photomask can be economized and the cost of manufacturing can be reduced.

Abstract: MEMS processes for fabrication of a MEMS alloy probe are revealed. Multiple layers of the MEMS alloy probe are formed on the substrate in sequences as a first surface layer, a first conductive layer, a core layer, a second conductive layer, and a second surface layer where the width of the first conductive layer is smaller than the one of first surface layer so that all the exposed edges of the first surface layer are not covered by the first conductive layer. The second surface layer is extended from the sidewalls of the core layer to the exposed edges of the first surface layer to encapsulate the core layer, the first conductive layer, and the second conductive layer. The MEMS alloy probe fabricated by the MEMS processes can eliminate the issue of oxidation.

Abstract: A process for preparing a semi-metallic friction material having improved thermal resistance includes preparing a semi-metallic composition containing (i) at least one carbonizable thermosetting resin as a binder; and (ii) at least one transition metal powder having a melting point higher than 1000° C. and density less than 10 g/ml; thermoforming said semi-metallic composition by curing said thermosetting resin; and heat-treating the resulting thermoformed product at a temperature of about 100 to 1000° C., preferably 200-600° C., to semi-carbonize said cured thermosetting resin.

Abstract: A method for preparing a carbon/carbon (C/C) composite comprising carbonizing a carbon fiber-reinforced polymer matrix composite precursor by heating the precursor in an inert atmosphere with a heating rate greater than 20° C./min up to 1500° C./min.