Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.

Abstract: A conductive paste composition is provided, and has a copper-containing conductive powder, an adhesive alloy powder selected from tin-based, bismuth-based, indium-based or zinc-based material, and an organic carrier. The organic carrier is 5-35% by weight of the conductive paste composition. Moreover, a method of producing a conductive structure is provided, and has steps of: applying the conductive paste composition onto the substrate to form a conductive pattern; heating the conductive pattern; and cooling the conductive pattern to obtain the conductive structure. The conductive pattern has a plurality of copper-containing conductive particles and an adhesive alloy. At least one part of the copper-containing conductive particles connects with each other through the adhesive alloy, and the copper-containing conductive particles are connected with the substrate by the adhesive alloy.

Abstract: A dynamic fault detection method comprises the steps of acquiring a data curve from a machine, performing a waveform-recognition process to check if the data curve includes an effective waveform, performing a data-diagnosing process to check if the value of the effective waveform in an effective region falls outside a predetermined range, and generating an alarm signal if the value of the effective waveform in the effective region falls outside the predetermined range. The waveform-recognition process comprises the steps of checking if the data curve includes a first segment, a second segment and a third segment sandwiched between the first segment and the second segment, and checking if the length of the third segment is larger than a predetermined value. The waveform is determined to include the effective waveform if the checking results are true.

Abstract: A system for detecting a plasma reaction and a method for using the same are provided. When the plasma reaction changes its reaction power, a lightness variation accompanies the power change. The system comprises a sensing device with a resistance that the resistance of the sensing device will be changed in response to the lightness variation; thereby the system can detect the status of the plasma reaction.

Abstract: A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.

Abstract: A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.