Abstract: Disclosed herein are humanized antibodies, antigen-binding fragments thereof, and antibody conjugates, that are capable of specifically binding to certain biantennary Lewis antigens, which antigens are expressed in a variety of cancers. The presently disclosed antibodies are useful to target antigen-expressing cells for treatment or detection of disease, including various cancers. Also provided are polynucleotides, vectors, and host cells for producing the disclosed antibodies and antigen-binding fragments thereof. Pharmaceutical compositions, methods of treatment and detection, and uses of the antibodies, antigen-binding fragments, antibody conjugates, and compositions are also provided.

Abstract: A circuit is disclosed, in accordance with some embodiments. The circuit includes a transistor stage, a resistive element, a first tunable capacitive element and a second tunable capacitive element. The transistor stage includes a first input/output terminal and a second input/output terminal. The resistive element is connected to the transistor stage. The first tunable capacitive element is connected in parallel with the resistive element. The second tunable capacitive element is connected to the second input/output terminal of the transistor stage. The first tunable capacitive element and the second tunable capacitive element are configured to be selectively turned on and off to provide different frequency responses.

Abstract: A semiconductor package according to the present disclosure includes a routing structure, a first die and a second die disposed over the routing structure, a first array of contact features disposed along a first direction and electrically coupling the first die to the routing structure, and a second array of contact features disposed along the first direction and electrically coupling the second die to the routing structure. The routing structure includes a plurality of metal lines and each of the plurality of metal lines electrically connects one of the first array of contact features and one of the second array of contact features. Each of the plurality of metal lines comprises at least two 90-degree turns on a horizontal plane.

Abstract: An apparatus and method for providing a decision feedback equalizer are disclosed herein. In some embodiments, a method and apparatus for reduction of inter-symbol interference (ISI) caused by communication channel impairments is disclosed. In some embodiments, a decision feedback equalizer includes a plurality of delay latches connected in series, a slicer circuit configured to receive an input signal from a communication channel and delayed feedback signals from the plurality of delay latches and determine a logical state of the received input signal, wherein the slicer circuit further comprises a dynamic threshold voltage calibration circuit configured to regulate a current flow between output nodes of the slicer circuit and ground based on the received delayed feedback signal and impulse response coefficients of the communication channel.

Abstract: An apparatus and method for providing a decision feedback equalizer are disclosed herein. In some embodiments, a method and apparatus for reduction of inter-symbol interference (ISI) caused by communication channel impairments is disclosed. In some embodiments, a decision feedback equalizer includes a plurality of delay latches connected in series, a slicer circuit configured to receive an input signal from a communication channel and delayed feedback signals from the plurality of delay latches and determine a logical state of the received input signal, wherein the slicer circuit further comprises a dynamic threshold voltage calibration circuit configured to regulate a current flow between output nodes of the slicer circuit and ground based on the received delayed feedback signal and impulse response coefficients of the communication channel.

Abstract: A circuit is disclosed, in accordance with some embodiments. The circuit includes a transistor stage, a resistive element, a first tunable capacitive element and a second tunable capacitive element. The transistor stage includes a first input/output terminal and a second input/output terminal. The resistive element is connected to the transistor stage. The first tunable capacitive element is connected in parallel with the resistive element. The second tunable capacitive element is connected to the second input/output terminal of the transistor stage. The first tunable capacitive element and the second tunable capacitive element are configured to be selectively turned on and off to provide different frequency responses.

Abstract: A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 ?m. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes active device portions and noise suppression portions and the tiers are arranged such that noise suppression portions are vertically interposed between active device portions. The noise suppression portions include decoupling capacitors in a power/ground mesh and alleviate vertical noise.

Abstract: A circuit is disclosed, in accordance with some embodiments. The circuit includes a transistor stage, a resistive element, a first tunable capacitive element and a second tunable capacitive element. The transistor stage includes a first input/output terminal and a second input/output terminal. The resistive element is connected to the transistor stage. The first tunable capacitive element is connected in parallel with the resistive element. The second tunable capacitive element is connected to the second input/output terminal of the transistor stage.

Abstract: A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 ?m. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes active device portions and noise suppression portions and the tiers are arranged such that noise suppression portions are vertically interposed between active device portions. The noise suppression portions include decoupling capacitors in a power/ground mesh and alleviate vertical noise.

Abstract: An apparatus and method for providing a decision feedback equalizer are disclosed herein. In some embodiments, a method and apparatus for reduction of inter-symbol interference (ISI) caused by communication channel impairments is disclosed. In some embodiments, a decision feedback equalizer includes a plurality of delay latches connected in series, a slicer circuit configured to receive an input signal from a communication channel and delayed feedback signals from the plurality of delay latches and determine a logical state of the received input signal, wherein the slicer circuit further comprises a dynamic threshold voltage calibration circuit configured to regulate a current flow between output nodes of the slicer circuit and ground based on the received delayed feedback signal and impulse response coefficients of the communication channel.

Abstract: An apparatus and method for providing a decision feedback equalizer are disclosed herein. In some embodiments, a method and apparatus for reduction of inter-symbol interference (ISI) caused by communication channel impairments is disclosed. In some embodiments, a decision feedback equalizer includes a plurality of delay latches connected in series, a slicer circuit configured to receive an input signal from a communication channel and delayed feedback signals from the plurality of delay latches and determine a logical state of the received input signal, wherein the slicer circuit further comprises a dynamic threshold voltage calibration circuit configured to regulate a current flow between output nodes of the slicer circuit and ground based on the received delayed feedback signal and impulse response coefficients of the communication channel.

Abstract: A circuit is disclosed, in accordance with some embodiments. The circuit includes a transistor stage, a resistive element, a first tunable capacitive element and a second tunable capacitive element. The transistor stage includes a first input/output terminal and a second input/output terminal. The resistive element is connected to the transistor stage. The first tunable capacitive element is connected in parallel with the resistive element. The second tunable capacitive element is connected to the second input/output terminal of the transistor stage.

Abstract: An apparatus and method for providing a decision feedback equalizer are disclosed herein. In some embodiments, a method and apparatus for reduction of inter-symbol interference (ISI) caused by communication channel impairments is disclosed. In some embodiments, a decision feedback equalizer includes a plurality of delay latches connected in series, a slicer circuit configured to receive an input signal from a communication channel and delayed feedback signals from the plurality of delay latches and determine a logical state of the received input signal, wherein the slicer circuit further comprises a dynamic threshold voltage calibration circuit configured to regulate a current flow between output nodes of the slicer circuit and ground based on the received delayed feedback signal and impulse response coefficients of the communication channel.

Abstract: A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 ?m. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes active device portions and noise suppression portions and the tiers are arranged such that noise suppression portions are vertically interposed between active device portions. The noise suppression portions include decoupling capacitors in a power/ground mesh and alleviate vertical noise.

Abstract: A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 ?m. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes active device portions and noise suppression portions and the tiers are arranged such that noise suppression portions are vertically interposed between active device portions. The noise suppression portions include decoupling capacitors in a power/ground mesh and alleviate vertical noise.

Abstract: A amplifier circuit in some embodiment includes a differential amplifier have a pair of current sources. Each of the current sources includes two or more current-generating transistors and respective switching transistors, which can be turned on and off by a gain input code to tune the gain of the amplifier. A common-mode controller includes a similar pair of current sources as the differential amplifier. The common mode controller receives a common-mode signal of the input signal and a common-mode gain input code, and maintains the common-mode gain of the amplifier circuit when the differential gain changes. The amplifier circuit is switchable between a buffer mode and an equalizer mode.

Abstract: An electronic system includes transmitting circuitry of a first clock domain and receiving circuitry of a second domain. The transmitting circuitry re-times a digital input signal with rising edges of a clocking signal of the first clock domain when a phase of the clocking signal of the first clock domain leads a phase of a clocking signal associated with the digital input signal. Otherwise, the transmitting circuitry re-times the digital input signal with falling edges of the clocking signal of the first clock domain when the phase of the clocking signal of the first clock domain does not lead the phase of the clocking signal associated with a digital input signal. The receiving circuitry receives the re-timed digital input signal from the transmitting circuitry.

Abstract: A amplifier circuit in some embodiment includes a differential amplifier have a pair of current sources. Each of the current sources includes two or more current-generating transistors and respective switching transistors, which can be turned on and off by a gain input code to tune the gain of the amplifier. A common-mode controller includes a similar pair of current sources as the differential amplifier. The common mode controller receives a common-mode signal of the input signal and a common-mode gain input code, and maintains the common-mode gain of the amplifier circuit when the differential gain changes. The amplifier circuit is switchable between a buffer mode and an equalizer mode.

Abstract: A stacked three dimensional semiconductor device includes multiple thin substrates stacked over one another and over a base substrate. The thin substrates may include a thickness of about 0.1 ?m. In some embodiments, a noise suppression tier is vertically interposed between active device tiers. In some embodiments, each tier includes active device portions and noise suppression portions and the tiers are arranged such that noise suppression portions are vertically interposed between active device portions. The noise suppression portions include decoupling capacitors in a power/ground mesh and alleviate vertical noise.

Abstract: An electronic system includes transmitting circuitry of a first clock domain and receiving circuitry of a second domain. The transmitting circuitry re-times a digital input signal with rising edges of a clocking signal of the first clock domain when a phase of the clocking signal of the first clock domain leads a phase of a clocking signal associated with the digital input signal. Otherwise, the transmitting circuitry re-times the digital input signal with falling edges of the clocking signal of the first clock domain when the phase of the clocking signal of the first clock domain does not lead the phase of the clocking signal associated with a digital input signal. The receiving circuitry receives the re-timed digital input signal from the transmitting circuitry.