Patents by Inventor Shu E Ku

Shu E Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin interface layer to improve copper etch stop
    Patent number: 6884659
    Abstract: In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl2H2) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH3) and N2, followed by forming an adhesive enhanced layer over the copper layer by treatment with N2 or O2 or N2 with alkyl-silane or alkyl silane.
    Type: Grant
    Filed: August 15, 2003
    Date of Patent: April 26, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Bi-Trong Chen, Lain-Jong Li, Syun-Ming Jang, Shu E Ku, Tien I. Bao, Lih-Ping Li
  • Thin interface layer to improve copper etch stop
    Patent number: 6623654
    Abstract: In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl2H2) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH3) and N2, followed by forming an adhesive enhanced layer over the copper layer by treatment with N2 or O2 or N2 with alkyl-silane or alkyl silane.
    Type: Grant
    Filed: November 9, 2001
    Date of Patent: September 23, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Bi-Trong Chen, Lain-Jong Li, Syun-Ming Jang, Shu E Ku, Tien I. Bao, Lih-Ping Li