Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

Abstract: The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: La3(1?x)Ga1?yGe5(1?z)O16: 3xA3+, yCr3+, 5zB4+, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Abstract: The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: La3(1?x)Ga1?yGe5(1?z)O16: 3xA3+, yCr3+, 5zB4+, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

Abstract: Disclosed are an electrode for an energy storage device and an energy storage device using the same. The electrode for an energy storage device comprises a porous electrical conductive material and a plurality of Co—Mn composite oxide nanowires on the porous electrical conductive material. The energy storage device comprises an anode comprising the aforementioned electrode; a cathode; and an electrolyte between the anode and the cathode.

Abstract: The present invention discloses a high electrochemical performance silicon/graphene composite anode structure. The electrochemical properties of silicon in the composite anode structure can be improved by graphene thin films. The thickness of the silicon thin film and the graphene thin films is less than 50 nm to prevent the composite anode structure from any volumetric change during the charge/discharge process. The manufacturing procedure starts with the formation of a Si/graphene unit layer, which includes an amorphous phase upper silicon thin film and a lower graphene thin film, on a copper foil current collector, so as to decrease the difference of conductivity between the silicon thin film and the copper foil current collector. Finally, the deposition is concluded with the formation of a graphene thin film on the topmost surface of the silicon thin film to prevent the surface of the anode structure from oxidation.

Abstract: Disclosed is a device for producing an electric current and a method for making the same. The device for producing an electric current, comprising: an anode comprising a stack formed by alternately stacking of at least one Si layer and at least one carbon material layer, and a LiPON layer on the stack; a cathode; and an electrolyte between the anode and the cathode.

Abstract: The present invention fluorescence material has a particle diameter of the crystal area defined as dc, and the scope of dc is: 150 nm?dc?10 nm. The coat of the outside of the fluorescence material has one sheet of coating medium at least. Of course, there is at least a geometrical etching layer on the particle of the fluorescence material. The above-described structures will promote the extraction efficiency of light.

Abstract: This invention discloses a wavelength converting material. The wavelength converting material comprises a metal haloaluminate compound phosphor with a chemical formula Mw-pAlyOzXq:Rp, wherein M is at least one element selected from the group of Be, Mg, Ca, Sr, Ba and Zn; X is at least one element selected from the group of F, Cl, Br, and I; R is one or more elements selected from the group of the transition metals and at least one element selected from the lanthanide series. Because the emitting wavelength of the metal haloaluminate compound phosphor is 550˜650 nm which is from the green to the red light spectrum, the white light mixed by the converted light of the metal haloaluminate phosphor and the blue light has better color rendering index. Besides, this invention also discloses the optoelectronic devices comprising the metal haloaluminate compound phosphor.

Abstract: The present invention fluorescence material has a particle diameter of the crystal area defined as dc, and the scope of dc is: 150 nm?dc?10 nm. The coat of the outside of the fluorescence material has one sheet of coating medium at least. Of course, there is at least a geometrical etching layer on the particle of the fluorescence material. The above-described structures will promote the extraction efficiency of light.

Abstract: This invention discloses a wavelength converting material. The wavelength converting material comprises a metal haloaluminate compound phosphor with a chemical formula Mw-pAlyOzXq:Rp, wherein M is at least one element selected from the group of Be, Mg, Ca, Sr, Ba and Zn; X is at least one element selected from the group of F, Cl, Br, and I; R is one or more elements selected from the group of the transition metals and at least one element selected from the lanthanide series. Because the emitting wavelength of the metal haloaluminate compound phosphor is 550˜650 nm which is from the green to the red light spectrum, the white light mixed by the converted light of the metal haloaluminate phosphor and the blue light has better color rendering index. Besides, this invention also discloses the optoelectronic devices comprising the metal haloaluminate compound phosphor.

Abstract: Optoelectronic devices with multiple nano-scale quantum dots detecting photons are presented. A nano-optoelectronic device includes a semiconductor substrate, an insulation layer on the semiconductor substrate, and a nano-optoelectronic structure on the insulation layer. The nano-optoelectronic structure includes a positive semiconductor, a negative semiconductor, and a plurality of quantum dots disposed therebetween. A first electrode connects the negative semiconductor, and a second electrode connects the positive semiconductor.

Abstract: A process for fabricating a nanoelectronic device by intermittent exposure is disclosed, consisting the steps of: providing a substrate on which a conductor or semiconductor thin film having a photoresist layer coated is formed; exposing the photoresist layer by lithography with a lithographic pattern which includes at least one noncontinuous quantum dot, a first electrode and a second electrode, in which the noncontinuous quantum dots are linearly arranged and sandwiched between the first electrode and the second electrode; and etching the thin film to form a quantum island group of linked quantum islands having both ends connected to the first electrode and the second electrode respectively so that the width of the quantum island is larger than the width of tunnel barriers positioned on the both sides of the quantum islands. A nanoelectronic device constructed according to the process is also disclosed.

Abstract: A method for fabricating a single-electron transistor (SET). A one dimensional channel is formed between source and drain on a silicon-on-insulator substrate, and the separated polysilicon sidewall spacer gates are formed by electron-beam lithographically etching process in a self-aligned manner. Operation of the single-electron transistor with self-aligned polysilicon sidewall spacer gates is achieved by applying external bias to the self-aligned polysilicon sidewall spacer gates to form two potential barriers and a quantum dot capable of storage charges between the two potential barriers. A metal upper gate is finally formed and biased to induce a two-dimensional electron gas (2DEG) and control the energy level of the quantum well.

Abstract: A method for fabricating a single-electron transistor (SET). A one dimensional channel is formed between source and drain on a silicon-on-insulator substrate, and the separated polysilicon sidewall spacer gates are formed by electron-beam lithographically etching process in a self-aligned manner. Operation of the single-electron transistor with self-aligned polysilicon sidewall spacer gates is achieved by applying external bias to the self-aligned polysilicon sidewall spacer gates to form two potential barriers and a quantum dot capable of storage charges between the two potential barriers. A metal upper gate is finally formed and biased to induce a two-dimensional electron gas (2DEG) and control the energy level of the quantum well.

Abstract: Superconducting compositions characterized by the formula (Pb.sub.a A.sub.1-a)(Sr.sub.b Ba.sub.1-b).sub.2 (Ca.sub.c B.sub.1-c)Cu.sub.2 O.sub.7 wherein at least half the A atoms are Hg and the remainder, if any, are selected from one or more of Cd, Tl and Cu, B is selected from Y and the rare earths, a is from 0.3 to 0.7, b is from 0 to 1 and c is from 0.2 to 0.5 are disclosed. The superconductive compositions display zero-resistance temperatures up to about 80K.