Patents by Inventor Shu-Fen Wu
Shu-Fen Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9976215Abstract: An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.Type: GrantFiled: May 1, 2012Date of Patent: May 22, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: You-Hua Chou, Chih-Tsung Lee, Shu-Fen Wu, Chin-Hsiang Lin
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Patent number: 9287154Abstract: Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.Type: GrantFiled: June 1, 2012Date of Patent: March 15, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming Huei Lien, Chia-Ho Chen, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
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Patent number: 9218998Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.Type: GrantFiled: October 3, 2014Date of Patent: December 22, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
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Publication number: 20150016011Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.Type: ApplicationFiled: October 3, 2014Publication date: January 15, 2015Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
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Patent number: 8902561Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.Type: GrantFiled: February 2, 2012Date of Patent: December 2, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
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Publication number: 20130320235Abstract: Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.Type: ApplicationFiled: June 1, 2012Publication date: December 5, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming Huei LIEN, Chia-Ho CHEN, Shu-Fen WU, Chih-Tsung LEE, You-Hua CHOU
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Publication number: 20130295297Abstract: An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.Type: ApplicationFiled: May 1, 2012Publication date: November 7, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: You-Hua CHOU, Chih-Tsung LEE, Shu-Fen WU, Chin-Hsiang LIN
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Publication number: 20130239889Abstract: A semiconductor manufacturing tool and method for operating the tool are provided. The semiconductor manufacturing tool includes a process chamber in which plasma operations or ion etching operations are carried out and a valve assembly for opening and closing a valve that provides for loading and unloading substrates into and out of, the semiconductor manufacturing tool. While a processing operation is being carried out in the chamber, a valve assembly purge operation also takes place. The valve assembly purge operation involves inert gases being directed to the valve assembly area to prevent the buildup of particles and contaminating films in the valve assembly. Because the valve assembly is maintained in a clean condition, particle contamination is reduced or eliminated.Type: ApplicationFiled: March 14, 2012Publication date: September 19, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming Huei LIEN, Chia-Ho CHEN, Shu-Fen WU, Chih-Tsung LEE, You-Hua CHOU
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Publication number: 20130201596Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.Type: ApplicationFiled: February 2, 2012Publication date: August 8, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
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Patent number: D1021775Type: GrantFiled: November 13, 2022Date of Patent: April 9, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1021776Type: GrantFiled: November 13, 2022Date of Patent: April 9, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1021777Type: GrantFiled: November 13, 2022Date of Patent: April 9, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1021778Type: GrantFiled: November 13, 2022Date of Patent: April 9, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1021779Type: GrantFiled: November 13, 2022Date of Patent: April 9, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1022882Type: GrantFiled: November 13, 2022Date of Patent: April 16, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1022883Type: GrantFiled: November 13, 2022Date of Patent: April 16, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1022884Type: GrantFiled: November 13, 2022Date of Patent: April 16, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen
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Patent number: D1022885Type: GrantFiled: November 13, 2022Date of Patent: April 16, 2024Inventors: Yu-Shuo Fan, Wen-Ming Wu, Shu-Fen Ke, Yung-Sung Chen