Abstract: A preclean process may be omitted from a eutectic bonding sequence. To remove oxide from one or more surfaces of a device wafer of a micro-electromechanical-system (MEMS) structure, a duration of an acid-based etch process in the eutectic bonding sequence may be increased relative to the duration of the acid-based etch process when the preclean process is performed. The increased duration of the acid-based etch process enables the acid-based etch process to remove the oxide from the one or more surfaces of the device wafer without the use of a preceding preclean process. This reduces the complexity and cycle time of the eutectic bonding sequence, reduces the risk of stiction between suspended mechanical components of the MEMS structure, and/or reduces the likelihood that the MEMS structure may be rendered defective or inoperable during manufacturing, which increases process yield.

Abstract: A preclean process may be omitted from a eutectic bonding sequence. To remove oxide from one or more surfaces of a device wafer of a micro-electromechanical-system (MEMS) structure, a duration of an acid-based etch process in the eutectic bonding sequence may be increased relative to the duration of the acid-based etch process when the preclean process is performed. The increased duration of the acid-based etch process enables the acid-based etch process to remove the oxide from the one or more surfaces of the device wafer without the use of a preceding preclean process. This reduces the complexity and cycle time of the eutectic bonding sequence, reduces the risk of stiction between suspended mechanical components of the MEMS structure, and/or reduces the likelihood that the MEMS structure may be rendered defective or inoperable during manufacturing, which increases process yield.

Abstract: A preclean process may be omitted from a eutectic bonding sequence. To remove oxide from one or more surfaces of a device wafer of a micro-electromechanical-system (MEMS) structure, a duration of an acid-based etch process in the eutectic bonding sequence may be increased relative to the duration of the acid-based etch process when the preclean process is performed. The increased duration of the acid-based etch process enables the acid-based etch process to remove the oxide from the one or more surfaces of the device wafer without the use of a preceding preclean process. This reduces the complexity and cycle time of the eutectic bonding sequence, reduces the risk of stiction between suspended mechanical components of the MEMS structure, and/or reduces the likelihood that the MEMS structure may be rendered defective or inoperable during manufacturing, which increases process yield.

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.