Patents by Inventor Shu-Hei Wang

Shu-Hei Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7648783
    Abstract: A cadmium tin oxide (Cd1?xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1?xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1?xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1?xSnxO; and (b) sputtering films of Cd1?xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: January 19, 2010
    Assignees: Industrial Research Technology Institute, Toth Information System, Inc.
    Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Shian-Jy Wang, Shu-Hei Wang, John R. Rodgers
  • Publication number: 20060141266
    Abstract: A cadmium tin oxide (Cd1-xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1-xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1-xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1-xSnxO; and (b) sputtering films of Cd1-xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
    Type: Application
    Filed: December 20, 2005
    Publication date: June 29, 2006
    Applicants: Industrial technology Research Institute, Toth Information System, Inc.
    Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Wang, Shu-Hei Wang, John Rodgers
  • Patent number: 6395928
    Abstract: The present invention relates to an improved process for producing an organic carboxylic acid having (n+1) carbon atoms by reacting an alcohol having n carbon atoms with carbon monoxide in the presence of a rhodium catalyst system. More particularly, the present invention relates to carbonylation of alcohol such as methanol catalyzed by a rhodium system to produce acetic acid. The characteristic of the present invention is the addition of a catalyst stabilizer in the reaction medium to avoid or to alleviate the precipitation of the catalyst in the liquid phase. The catalyst as used herein is a an inorganic salt of alkaline metal having the following formula (A): XnMm  (A) X=Li+, Na+, K+; M=CO3−2, HCO3−, PO4−3, HPO4−2, H2PO4−, SO4−2, HSO4−, C2O4−2, HC2O4−, B(C6Y5)4−1; Y=H, F or CF3.
    Type: Grant
    Filed: January 12, 2000
    Date of Patent: May 28, 2002
    Assignee: China Petrochemical Development Corporation
    Inventors: Kuo-Chen Shih, Shu-Hei Wang, Tsu-Tseng Weng, Kou-Suein Ai
  • Patent number: 6346644
    Abstract: The present invention relates to an improved process for producing an organic carboxylic acid having (n+1) carbon atoms by reacting an alcohol having n carbon atoms with carbon monoxide in the presence of a rhodium catalyst system. More particularly, the present invention relates to carbonylation of alcohol such as methanol catalyzed by a rhodium system to produce acetic acid. The characteristic of the present invention is the addition of a catalyst stabilizer in the reaction medium to avoid or to alleviate the precipitation of the catalyst in the liquid phase. The catalyst stabilizer as used herein is a pyridine derivative having substituent(s) of such as (CH2)mCOOR or (CH2)mSO3R (R═H or hydrocarbons; m=0-6).
    Type: Grant
    Filed: January 12, 2000
    Date of Patent: February 12, 2002
    Assignee: China Petrochemical Development Corp.
    Inventors: Kuo-Chen Shih, Shu-Hei Wang, Tsu-Tseng Weng, Kou-Suein Ai