Abstract: A device used for attaching a semiconductor device to a circuit board over a first temperature. The device includes a hook member that includes a first hook, a second hook, and a body between the first hook and the second hook. The body has a first surface, a second surface opposite the first surface, and a first hole extended from the first surface to the second surface. The device further includes a fixing member and a holder. The fixing member has a second hole, and the holder passes through the first hole and the second hole, and is engaged with the fixing member.

Abstract: A device used for attaching a semiconductor device to a circuit board over a first temperature. The device includes a hook member that includes a first hook, a second hook, and a body between the first hook and the second hook. The body has a first surface, a second surface opposite the first surface, and a first hole extended from the first surface to the second surface. The device further includes a fixing member and a holder. The fixing member has a second hole, and the holder passes through the first hole and the second hole, and is engaged with the fixing member.

Abstract: A method for improving edge peeling defect is disclosed in this invention. According to this invention, a wafer can be kept from the edge peeling defect of the prior art by introducing a step for removing the weakly adhesive films and the metal structures at the wafer edge after forming a metal interconnect layer on the wafer. Thus, this invention can raise the yield of semiconductor manufacturing, and reduce the pollution chance of the chamber of the semiconductor manufacture.

Abstract: A method for improving edge peeling defect is disclosed in this invention. According to this invention, a wafer can be kept from the edge peeling defect of the prior art by introducing a step for removing the weakly adhesive films and the metal structures at the wafer edge after forming a metal interconnect layer on the wafer. Thus, this invention can raise the yield of semiconductor manufacturing, and reduce the pollution chance of the chamber of the semiconductor manufacture.

Abstract: A cathode for use in an electron gun includes a base metal comprising Ni as a principal component and a two-layer electron emissive material disposed on the base metal. The inner layer is comprised of an alkaline earth metal oxide and 1-30 wt. % W and may further include 0.1-5 wt. % of a rare earth metal oxide. The outer layer is comprised of an alkaline earth metal oxide and may further include 0.1-5 wt. % of a rare earth metal oxide. The outer electron emissive layer provides stability for the cathode. In the degassing and activation process, W and Ni react at high temperatures to form a Ni4W fine crystal structure. An intermediate layer, such as Ba2SiO4, is dispersed in the Ni4W fine crystal structure in operation. Free barium is produced in reactions between the various cathode components to provide a high current density for the cathode. The normalized electron emission current value of the cathode does not decrease with use, even over extended periods of operation.