Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A layout of a semiconductor memory device includes a substrate and a ternary content addressable memory (TCAM). The TCAM is disposed on the substrate and includes a plurality of TCAM bit cells, where at least two of the TCAM bit cells are mirror-symmetrical along an axis of symmetry, and each of the TCAM bit cells includes two storage units electrically connected to two word lines respectively, and a logic circuit electrically connected to the storage units. The logic circuit includes two first reading transistors, and two second reading transistors, where each of the second reading transistors includes a gate and source and drain regions, the source and drain regions of the second reading transistors are electrically connected to two matching lines and the first reading transistors, respectively, where the word lines are disposed parallel to and between the matching lines.

Abstract: A loop gain calibration apparatus has an exciting signal generator, an exciting signal extracting circuit, and a loop gain control circuit. The exciting signal generator generates a first exciting signal and injects the first exciting signal into a timing recovery loop while the timing recovery loop is operating in response to a reception signal received under a normal reception mode. The exciting signal extracting circuit extracts a second exciting signal from the timing recovery loop after the first exciting signal is injected into the timing recovery loop. The loop gain control circuit receives the first exciting signal from the exciting signal generator, receives the second exciting signal from the exciting signal extracting circuit, and controls a loop gain of the timing recovery loop according to the first exciting signal and the second exciting signal.

Abstract: A wireless radio frequency identification (RFID) system is provided. The wireless RFID system includes at least one passive RFID tag, at least one active RFID tag and at least one sink apparatus. The active RFID tag transmits a wireless query signal to detect whether the passive RFID tag and /or other active RFID tags are in its scanning range according to a transmission specification. Moreover, the active RFID tag collects the detecting result into an inventory data, converts itself to one passive RFID tag, and transmits the inventory data to other active RFID tags utilizing the same method. Then, an identification data in the passive RFID tag and /or the inventory data in the active RFID tag are read by the sink apparatus according to the above-mentioned transmission specification. Therefore, the wireless RFID only uses a signal transmission specification to route the data back to the sink apparatus.