Patents by Inventor SHU-HUA HSU

SHU-HUA HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11996466
    Abstract: A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.
    Type: Grant
    Filed: May 9, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Huang Huang, Ming-Jhe Sie, Cheng-Chung Chang, Shao-Hua Hsu, Shu-Uei Jang, An Chyi Wei, Shiang-Bau Wang, Ryan Chia-Jen Chen
  • Patent number: 11973001
    Abstract: Semiconductor devices and methods of manufacture which utilize lids in order to constrain thermal expansion during annealing are presented. In some embodiments lids are placed and attached on encapsulant and, in some embodiments, over first semiconductor dies. As such, when heat is applied, and the encapsulant attempts to expand, the lid will work to constrain the expansion, reducing the amount of stress that would otherwise accumulate within the encapsulant.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shu-Shen Yeh, Chin-Hua Wang, Chia-Kuei Hsu, Po-Yao Lin, Shin-Puu Jeng
  • Patent number: 11958929
    Abstract: An organometallic complex, a catalyst composition employing the same, and a method for preparing polyolefin are provided. The organometallic compound has a structure represented by Formula (I) wherein M is Ti, Zr, or Hf; X is —O—, or —NR6—; R1 and R2 are independently hydrogen, C1-6 alkyl group, C6-12 aryl group, or R1 and R2 are combined with the carbon atoms, to which they are attached, to form an C6-12 aryl moiety; R3, R4 and R5 are independently fluoride, chloride, bromide, C1-6 alkyl group, C6-12 aryl group, C3-6 hetero aryl group, C7-13 aryl alkyl group or C7-12 alkyl aryl group; and R6 is hydrogen, C6-12 aryl group or C7-12 alkyl aryl group.
    Type: Grant
    Filed: June 24, 2022
    Date of Patent: April 16, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chien-Wei Hsu, Jyun-Wei Hong, Pao Tsern Lin, Shu-Hua Chan
  • Publication number: 20240096731
    Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Chin-Hua WANG, Po-Yao LIN, Feng-Cheng HSU, Shin-Puu JENG, Wen-Yi LIN, Shu-Shen YEH
  • Patent number: 10015935
    Abstract: The present invention provides a method of reducing nitrate content in a plant by supplementing Rhodopseudomonas palustris DSM 29314 with a hydroponic nutrient solution, wherein the plant can grow in the hydroponic nutrient solution. The bacteria can effectively reduce 50% to 88% of the nitrate content in the plant, and only requires half concentration of the hydroponic nutrient solution than usual to enhance the fresh and dry weight of the plant up to 17% to 44%. It can effectively reduce cost, increase income and provide safe crops.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: July 10, 2018
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chi-Te Liu, Huu-Sheng Lur, Kai-Jiun Lo, Shu-Hua Hsu
  • Publication number: 20160242362
    Abstract: The present invention provides a method of reducing nitrate content in a plant by supplementing Rhodopseudomonas palustris DSM 29314 with a hydroponic nutrient solution, wherein the plant can grow in the hydroponic nutrient solution. The bacteria can effectively reduce 50% to 88% of the nitrate content in the plant, and only requires half concentration of the hydroponic nutrient solution than usual to enhance the fresh and dry weight of the plant up to 17% to 44%. It can effectively reduce cost, increase income and provide safe crops.
    Type: Application
    Filed: June 5, 2015
    Publication date: August 25, 2016
    Inventors: Chi-Te Liu, Huu-Sheng Lur, Kai-Jiun Lo, Shu-Hua Hsu
  • Patent number: 8502736
    Abstract: An electronic device includes a multi-layer circuit board, a main antenna, and an electronic element. The multi-layer circuit board includes an outer layer, a ground layer, and a plurality of vias defined therein electrically connected the outer layer and the ground layer. The main antenna is mounted on the outer layer and electrically connected to the ground layer by the vias. The electronic element is mounted on the outer layer, soldered on the main antenna, and electrically connected to the ground layer by the main antenna.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: August 6, 2013
    Assignee: FIH (Hong Kong) Limited
    Inventors: Chin-Hung Ma, Chi-Sheng Liu, Shu-Hua Hsu
  • Publication number: 20120162019
    Abstract: An electronic device includes a multi-layer circuit board, a main antenna, and an electronic element. The multi-layer circuit board includes an outer layer, a ground layer, and a plurality of vias defined therein electrically connected the outer layer and the ground layer. The main antenna is mounted on the outer layer and electrically connected to the ground layer by the vias. The electronic element is mounted on the outer layer, soldered on the main antenna, and electrically connected to the ground layer by the main antenna.
    Type: Application
    Filed: August 29, 2011
    Publication date: June 28, 2012
    Applicant: CHI MEI COMMUNICATION SYSTEMS, INC.
    Inventors: CHIN-HUNG MA, CHI-SHENG LIU, SHU-HUA HSU