Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A continuous manufacturing equipment of an elastic three-dimensional fabric and a continuous manufacturing method thereof are disclosed. The continuous manufacturing equipment includes: a film conveying device having a thermal melting film and a conveying mechanism; a cutting device used for cutting a plurality of cutting gaps on the thermal melting film; a first fabric laminating device adhering an outer fabric on one surface of the thermal melting film; and a second fabric laminating device adhering an elastic fabric on another surface of the thermal melting film in a manner of elastically stretching and then elastically recovering. As such, effects of automatic, continuous, and simple steps in manufacturing and having a high yield rate are provided.

Abstract: A pressure relief apparatus with brain entrainment includes a resonant wave generating module and a bio-signal measuring unit. The resonant wave generating module includes multiple resonant devices, divided into multiple regions. Each of the resonant regions can respectively generate a resonant wave being changeable or turned off. The bio-signal measuring unit at least measures an energy of autonomic sympathetic nerve system LH and an energy of autonomic parasympathetic nerve system HF. According to a current one of a set of present conditions, a set of feedback control signals is output to the resonant wave generating module to modulate the resonant devices.

Abstract: A pressure relief apparatus with brain entrainment includes a resonant wave generating module and a bio-signal measuring unit. The resonant wave generating module includes multiple resonant devices, divided into multiple regions. Each of the resonant regions can respectively generate a resonant wave being changeable or turned off. The bio-signal measuring unit at least measures an energy of autonomic sympathetic nerve system LH and an energy of autonomic parasympathetic nerve system HF. According to a current one of a set of present conditions, a set of feedback control signals is output to the resonant wave generating module to modulate the resonant devices.

Abstract: An optical measuring system includes a carrying tray for carrying a specimen, a first light source module, a second light source module and an optical measuring module. The first light source module is disposed at the first side of the carrying tray and the specimen is disposed on the optical path of the first light source module. The second light source module is disposed at the second side of the carrying tray and the specimen is disposed on the optical path of the second light source module. The optical measuring module is disposed at the first side or the second side of the carrying tray, and the specimen is located within the probing range of the optical measuring module.

Abstract: An optical measuring system includes a carrying tray for carrying a specimen, a first light source module, a second light source module and an optical measuring module. The first light source module is disposed at the first side of the carrying tray and the specimen is disposed on the optical path of the first light source module. The second light source module is disposed at the second side of the carrying tray and the specimen is disposed on the optical path of the second light source module. The optical measuring module is disposed at the first side or the second side of the carrying tray, and the specimen is located within the probing range of the optical measuring module.

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract: A three dimensional adjustable high frequency inductor, its module and fabrication method of the same. The high frequency module includes micro high frequency inductors, filters, resistors, capacitors and associated with active components or power components to form a hybrid circuit, then it is packaged by using the technology of flip chip or wafer level packaging, so as to upgrade properties of high frequency modules and reduce the packaging and instrumentation costs by minimizing the modular size.

Abstract: Disclosed herein is a method for inductor An Improved Structure For the Endpiece of Tape Rule of the high frequency integrated passive devices in which a spiral inductor pattern is formed on an insulation substrate, the spiral inductor pattern is spirally coiled outwards from the center. A thick film dielectric layer made of bisbenzocyclobutene (BCB) is formed on the spiral inductor pattern. A metal layer can be formed according to under bump metallization technique (UBM). The metal layer is either formed into a continuous spirally coiled form or a spread discrete configuration. With this structure, laser trimming can be applied to the metal layer pattern so as to acquire an ideal inductance value, thereby achieving wafer level trimming and compensating the process tolerance.

Abstract: A bulk acoustic wave multiplexer controlled by micro-electro-mechanical switches, it comprises: a substrate; a wave-filtering device disposed on the substrate; an input port disposed on one side of the wave-filtering device; an output port disposed on another side of the wave-filtering device; and micro-electro-mechanical switches disposed on the wave-filtering device for controlling the bulk acoustic wave multiplexer; the present invention provides a bulk acoustic wave multiplexer device having miniaturized size and less interference integrated with micro-electro-mechanical switch devices, so as to operate multiplexing function.

Abstract: A three dimensional adjustable high frequency inductor, its module and fabrication method of the same; the high frequency module comprises micro high frequency inductors, filters, resistors, capacitors and associated with active components or power components to form a hybrid circuit, then it is packaged by using the technology of flip chip or wafer level packaging, so as to upgrade properties of high frequency modules and reduce the packaging and instrumentation costs by minimizing the modular size.

Abstract: A thin film acoustic wave device and the manufacturing method thereof, it provides a method of manufacturing acoustic wave devices of different FOM (figures of merit) by means of the crystalline orientation of the piezoelectric layer in cooperated with the various electric field directions of the driving electrode, so as to provide acoustic wave devices that are optimized under various specifications.

Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.

Abstract: A method for manufacturing a film bulk acoustic wave filter, wherein a single-layer high-acoustic-impedance reflection layer is applied for the film bulk acoustic wave, for example, a diamond film with single-layer high-acoustic-impedance or a BCB film with single-layer low-acoustic-impedance is used as a reflection layer under the film bulk acoustic wave device in order to replace the cavity-reflective construction or the multi-layer reflection construction that are presently used; thus, there is no need for etching the cavity, the steadiness of the device and the yield of the device can be improved, and the FOM (figure of merit) of the film acoustic wave device is also improved; further, as there is no backside etching and front-side etching proceeded, the size of die is reduced greatly, so it is advantageous to mass production.

Abstract: A manufacturing method for a high quality film bulk acoustic wave device, wherein a lower electrode protecting layer is partially defined or not applied, thus the quality factor of the bulk acoustic wave device is improved.

Abstract: A micro-electro-mechanical high frequency switch and method for manufacturing the high frequency switch, comprising the steps of: providing a substrate; forming a metal transmission line and a driving electrode on the substrate; forming a dielectric layer on said metal transmission line and said driving electrode; forming a micro-electro-mechanical switch; forming driving electrodes on and beneath the micro-electro-mechanical switch; such that the driving voltage of high frequency switch is reduced, the insertion loss is lowered, the isolation is high, and the functions of high frequency switch is improved.

Abstract: A bulk acoustic wave multiplexer controlled by micro-electro-mechanical switches, it comprises: a substrate; a wave-filtering device disposed on the substrate; an input port disposed on one side of the wave-filtering device; an output port disposed on another side of the wave-filtering device; and micro-electro-mechanical switches disposed on the wave-filtering device for controlling the bulk acoustic wave multiplexer; the present invention provides a bulk acoustic wave multiplexer device having miniatuized size and less interference integrated with micro-electro-mechanical switch devices, so as to operate multiplexing function.

Abstract: A bulk acoustic wave filter device and its package. The filter devices greatly decreases the manufacturing process complexity by the coplanar electrode layout, and it omits the process steps of forming via hole of connectors, such that it is convenient to the coplanar high frequency on-wafer measurement and trimming. Furthermore, by using the wafer level chip scale package (WLCSP) technique, which to integrate the series resonator and the shunt resonator can be integrated, the spaces of filter can be saved and the cost of package can be down.