Abstract: A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a first spacer layer adjacent to the second pinned layer, a second spacer layer, a ferromagnetic layer sandwiched by the first spacer layer and the second spacer layer, a polarization enhancement layer adjacent to the second spacer layer.

Abstract: A method of protecting an in-vivo sensor includes forming a sensing surface on a surface of the in-vivo sensor, the sensing surface including a functionalized monolayer that will bind to an analyte of interest; and coating the sensing surface of the sensor with a bioabsorbable polymeric coating including a bioabsorbable polymer; wherein the bioabsorbable polymeric coating is configured to protect the in-vivo sensor until needed for implantation.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

Abstract: A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.

Abstract: A method for fabricating a magnetic tunneling junction (MTJ) element is disclosed. A substrate is provided. A reference layer is formed on the substrate. A tunnel barrier layer is formed on the reference layer. A free layer is formed on the tunnel barrier layer. A composite capping layer is formed on the free layer. The composite capping layer comprises an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The reference layer, the tunnel barrier layer, the free layer, and the composite capping layer constitute an MTJ stack.

Abstract: A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.

Abstract: Methods of forming a battery include forming a thin graphene cathode on a substrate. A lithium anode is formed and an electrolyte is formed between the thin graphene cathode and the lithium anode.

Abstract: Sub-lithographic structures configured for selective placement of carbon nanotubes and methods of fabricating the same generally includes alternating conformal first and second layers provided on a topographical pattern formed in a dielectric layer. The conformal layers can be deposited by atomic layer deposition or chemical vapor deposition at thicknesses less than 5 nanometers. A planarized surface of the alternating conformal first and second layers provides an alternating pattern of exposed surfaces corresponding to the first and second layer, wherein a width of at least a portion of the exposed surfaces is substantially equal to the thickness of the corresponding first and second layers. The first layer is configured to provide an affinity for carbon nanotubes and the second layer does not have an affinity such that the carbon nanotubes can be selectively placed onto the exposed surfaces of the alternating pattern corresponding to the first layer.

Abstract: A drug delivery system includes a substrate, an integrated sensor disposed on the substrate, a drug delivery element disposed on the substrate, and a control unit coupled to the integrated sensor and the drug delivery element. The integrated sensor includes first and second electrodes disposed on a first surface of the substrate. The drug delivery element includes a reservoir disposed on the first surface of the substrate, a thermally active polymer enclosing the reservoir, and a heating coil disposed over the thermally active polymer. The control unit is configured to measure a biological parameter by measuring a voltage difference between the first and second electrodes of the integrated sensor, and to apply a trigger signal to the heating coil of the drug delivery element responsive to the measured biological parameter indicating a designated condition to heat up the thermally active polymer to selectively release a drug from the reservoir.

Abstract: Batteries include an anode, an electrolyte having a high solubility for lithium ions and oxygen, and a cathode formed on a substrate. Lithium ions migrate from the anode through the electrolyte to form Li2O2 at a surface of the cathode. A current collector positioned in the electrolyte, the electrolyte separating the anode from the cathode.

Abstract: A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.

Abstract: A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.

Abstract: Differential, plasmonic, non-dispersive infrared gas sensors are provided. In one aspect, a gas sensor includes: a plasmonic resonance detector including a differential plasmon resonator array that is resonant at different wavelengths of light; and a light source incident on the plasmonic resonance detector. The differential plasmon resonator array can include: at least one first set of plasmonic resonators interwoven with at least one second set of plasmonic resonators, wherein the at least one first set of plasmonic resonators is configured to be resonant with light at a first wavelength, and wherein the at least one second set of plasmonic resonators is configured to be resonant with light at a second wavelength. A method for analyzing a target gas and a method for forming a plasmonic resonance detector are also provided.

Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.

Abstract: A composite storage layer for magnetic memory devices includes a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer. The tri-layered spacer stack comprises a first non-magnetic layer, a discontinuous, insulating oxide layer, and a second non-magnetic layer. The discontinuous, insulating oxide layer is sandwiched by the first non-magnetic layer and the second non-magnetic layer.

Abstract: A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.

Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.

Abstract: A method of protecting an in-vivo sensor includes forming a sensing surface on a surface of the in-vivo sensor, the sensing surface including a functionalized monolayer that will bind to an analyte of interest; and coating the sensing surface of the sensor with a bioabsorbable polymeric coating including a bioabsorbable polymer; wherein the bioabsorbable polymeric coating is configured to protect the in-vivo sensor until needed for implantation.

Abstract: A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a first spacer layer adjacent to the second pinned layer, a second spacer layer, a ferromagnetic layer sandwiched by the first spacer layer and the second spacer layer, a polarization enhancement layer adjacent to the second spacer layer.

Abstract: Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors. Embodiments also include a methods of forming flexible active electrode arrays including depositing a flexible polymer on a substrate. The methods also include forming a plurality of sensors on the flexible polymer and attaching a silicon-based chip to the flexible shank. The methods also include coating the flexible shank in a bioabsorbable material and cutting the shank and a portion of the bioabsorbable material from the substrate.