Patents by Inventor Shu-Jen Han

Shu-Jen Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190374712
    Abstract: A drug delivery system includes a substrate, an integrated sensor disposed on the substrate, a drug delivery element disposed on the substrate, and a control unit coupled to the integrated sensor and the drug delivery element. The integrated sensor includes first and second electrodes disposed on a first surface of the substrate. The drug delivery element includes a reservoir disposed on the first surface of the substrate, a thermally active polymer enclosing the reservoir, and a heating coil disposed over the thermally active polymer. The control unit is configured to measure a biological parameter by measuring a voltage difference between the first and second electrodes of the integrated sensor, and to apply a trigger signal to the heating coil of the drug delivery element responsive to the measured biological parameter indicating a designated condition to heat up the thermally active polymer to selectively release a drug from the reservoir.
    Type: Application
    Filed: June 6, 2018
    Publication date: December 12, 2019
    Inventors: Qing Cao, Shu-Jen Han, Jianshi Tang, Bharat Kumar
  • Publication number: 20190371955
    Abstract: A method of fabricating a visibly transparent, ultraviolet (UV) photodetector is provided. The method includes laying a first electrode onto a substrate surface, the first electrode being formed of a carbon-based, single-layer material. A block is patterned over an end of the first electrode and portions of the substrate surface. The block is formed of a visibly transparent material that is able to be deposited into the block at 75° C.-125° C. In addition, the method includes masking a section of the block and exposed sections of the first electrode. A second electrode is laid onto an unmasked section of the block with an end of the second electrode laid onto the substrate surface. The second electrode is formed of the carbon-based, single-layer material.
    Type: Application
    Filed: May 31, 2018
    Publication date: December 5, 2019
    Inventors: Damon Farmer, Shu-Jen Han
  • Patent number: 10481090
    Abstract: Differential, plasmonic, non-dispersive infrared gas sensors are provided. In one aspect, a gas sensor includes: a plasmonic resonance detector including a differential plasmon resonator array that is resonant at different wavelengths of light; and a light source incident on the plasmonic resonance detector. The differential plasmon resonator array can include: at least one first set of plasmonic resonators interwoven with at least one second set of plasmonic resonators, wherein the at least one first set of plasmonic resonators is configured to be resonant with light at a first wavelength, and wherein the at least one second set of plasmonic resonators is configured to be resonant with light at a second wavelength. A method for analyzing a target gas and a method for forming a plasmonic resonance detector are also provided.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: November 19, 2019
    Assignee: International Business Machines Corporation
    Inventors: Abram L. Falk, Damon B. Farmer, Shu-Jen Han
  • Patent number: 10475948
    Abstract: A method of fabricating a visibly transparent, ultraviolet (UV) photodetector is provided. The method includes laying a first electrode onto a substrate surface, the first electrode being formed of a carbon-based, single-layer material. A block is patterned over an end of the first electrode and portions of the substrate surface. The block is formed of a visibly transparent material that is able to be deposited into the block at 75° C.-125° C. In addition, the method includes masking a section of the block and exposed sections of the first electrode. A second electrode is laid onto an unmasked section of the block with an end of the second electrode laid onto the substrate surface. The second electrode is formed of the carbon-based, single-layer material.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: November 12, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Damon Farmer, Shu-Jen Han
  • Patent number: 10468098
    Abstract: A resistive processing unit (RPU) device includes a weight storage device to store a weight voltage which corresponds to a weight value of the RPU device, and a read transistor having a gate connected to the weight storage device, and first and second source/drain terminals connected to first and second control ports, respectively. A current source connected to the second source/drain terminal generates a fixed reference current. The read transistor generates a weight current in response to the weight voltage. A read current output from the second control port represents a signed weight value of the RPU device. A magnitude of the read current is equal to a difference between the weight current and the fixed reference current. The sign of the read current is positive when the weight current is greater than the fixed reference current, and negative when the weight current is less than the fixed reference current.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: November 5, 2019
    Assignee: International Business Machines Corporation
    Inventors: Seyoung Kim, Hyung-Min Lee, Tayfun Gokmen, Shu-Jen Han
  • Patent number: 10453527
    Abstract: A resistive processing unit (RPU) device includes a weight storage device to store a weight voltage which corresponds to a weight value of the RPU device, and a read transistor having a gate connected to the weight storage device, and first and second source/drain terminals connected to first and second control ports, respectively. A current source connected to the second source/drain terminal generates a fixed reference current. The read transistor generates a weight current in response to the weight voltage. A read current output from the second control port represents a signed weight value of the RPU device. A magnitude of the read current is equal to a difference between the weight current and the fixed reference current. The sign of the read current is positive when the weight current is greater than the fixed reference current, and negative when the weight current is less than the fixed reference current.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: October 22, 2019
    Assignee: International Business Machines Corporation
    Inventors: Seyoung Kim, Hyung-Min Lee, Tayfun Gokmen, Shu-Jen Han
  • Publication number: 20190319191
    Abstract: Sub-lithographic structures configured for selective placement of carbon nanotubes and methods of fabricating the same generally includes alternating conformal first and second layers provided on a topographical pattern formed in a dielectric layer. The conformal layers can be deposited by atomic layer deposition or chemical vapor deposition at thicknesses less than 5 nanometers. A planarized surface of the alternating conformal first and second layers provides an alternating pattern of exposed surfaces corresponding to the first and second layer, wherein a width of at least a portion of the exposed surfaces is substantially equal to the thickness of the corresponding first and second layers. The first layer is configured to provide an affinity for carbon nanotubes and the second layer does not have an affinity such that the carbon nanotubes can be selectively placed onto the exposed surfaces of the alternating pattern corresponding to the first layer.
    Type: Application
    Filed: April 13, 2018
    Publication date: October 17, 2019
    Inventor: Shu-Jen Han
  • Patent number: 10446398
    Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: October 15, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Qing Cao, Shu-Jen Han, Ning Li, Jianshi Tang
  • Publication number: 20190304539
    Abstract: A resistive processing unit (RPU) device includes a weight storage device to store a weight voltage which corresponds to a weight value of the RPU device, and a read transistor having a gate connected to the weight storage device, and first and second source/drain terminals connected to first and second control ports, respectively. A current source connected to the second source/drain terminal generates a fixed reference current. The read transistor generates a weight current in response to the weight voltage. A read current output from the second control port represents a signed weight value of the RPU device. A magnitude of the read current is equal to a difference between the weight current and the fixed reference current. The sign of the read current is positive when the weight current is greater than the fixed reference current, and negative when the weight current is less than the fixed reference current.
    Type: Application
    Filed: March 14, 2019
    Publication date: October 3, 2019
    Inventors: Seyoung Kim, Hyung-Min Lee, Tayfun Gokmen, Shu-Jen Han
  • Publication number: 20190304538
    Abstract: A resistive processing unit (RPU) device includes a weight storage device to store a weight voltage which corresponds to a weight value of the RPU device, and a read transistor having a gate connected to the weight storage device, and first and second source/drain terminals connected to first and second control ports, respectively. A current source connected to the second source/drain terminal generates a fixed reference current. The read transistor generates a weight current in response to the weight voltage. A read current output from the second control port represents a signed weight value of the RPU device. A magnitude of the read current is equal to a difference between the weight current and the fixed reference current. The sign of the read current is positive when the weight current is greater than the fixed reference current, and negative when the weight current is less than the fixed reference current.
    Type: Application
    Filed: March 13, 2019
    Publication date: October 3, 2019
    Inventors: Seyoung Kim, Hyung-Min Lee, Tayfun Gokmen, Shu-Jen Han
  • Publication number: 20190296158
    Abstract: Photodetectors and methods of forming the same include a first electrode. A carbon nanotube film is formed on the first electrode. A first graphene sheet is formed on the carbon nanotube film. A second graphene sheet is configured to exert an electrical field on the first graphene sheet that changes an electrical property of the first graphene sheet.
    Type: Application
    Filed: March 23, 2018
    Publication date: September 26, 2019
    Inventors: Abram L. Falk, Kuan-Chang Chiu, Damon B. Farmer, Shu-Jen Han
  • Patent number: 10416965
    Abstract: A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET (metal oxide semiconductor field effect transistor) device and a gate voltage Vg of the MOSFET device so that the MOSFET device comprises a noise source configured in a manner such as to tune as desired a random number statistical distribution of an output of the MOSFET device. An output voltage of the MOSFET is provided as an input signal into a low noise amplifier and an output voltage of the low noise amplifier provides values for a random number generator.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 17, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chia-yu Chen, Damon Farmer, Suyog Gupta, Shu-jen Han
  • Publication number: 20190277761
    Abstract: Differential, plasmonic, non-dispersive infrared gas sensors are provided. In one aspect, a gas sensor includes: a plasmonic resonance detector including a differential plasmon resonator array that is resonant at different wavelengths of light; and a light source incident on the plasmonic resonance detector. The differential plasmon resonator array can include: at least one first set of plasmonic resonators interwoven with at least one second set of plasmonic resonators, wherein the at least one first set of plasmonic resonators is configured to be resonant with light at a first wavelength, and wherein the at least one second set of plasmonic resonators is configured to be resonant with light at a second wavelength. A method for analyzing a target gas and a method for forming a plasmonic resonance detector are also provided.
    Type: Application
    Filed: March 12, 2018
    Publication date: September 12, 2019
    Inventors: Abram L. Falk, Damon B. Farmer, Shu-Jen Han
  • Patent number: 10396300
    Abstract: A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the gate dielectric. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. The openings expose portions of the gate dielectric and end portions of the channel material under the patterned resist layer. Metal contacts are formed at least within the openings. The metal contacts include a portion that contacts the end portions of the channel material and the portions of the gate dielectric exposed within the openings.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: August 27, 2019
    Assignee: International Business Machines Corporation
    Inventors: Shu-Jen Han, Jianshi Tang
  • Patent number: 10396284
    Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: August 27, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Shu-Jen Han
  • Publication number: 20190259953
    Abstract: A textile article includes a first fabric including a plurality of first carbon nanotubes coupled to the first fabric. The first carbon nanotubes of the plurality of first carbon nanotubes are metallic carbon nanotubes. A second fabric includes a plurality of second carbon nanotubes coupled to the second fabric. The second carbon nanotubes of the plurality of second carbon nanotubes are semiconductive carbon nanotubes. The first fabric is interconnected with the second fabric.
    Type: Application
    Filed: May 2, 2019
    Publication date: August 22, 2019
    Inventors: ABRAM L. FALK, SHU-JEN HAN, BHARAT KUMAR
  • Patent number: 10381586
    Abstract: A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the dielectric layer. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. Metal contacts are formed on the channel material in the openings in the patterned resist layer and over portions of the patterned resist layer to protect sidewalls of the metal contacts to prevent degradation of the metal contacts.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: August 13, 2019
    Assignee: International Business Machines Corporation
    Inventors: Shu-Jen Han, Jianshi Tang
  • Patent number: 10370790
    Abstract: A textile article includes a first fabric including a plurality of first carbon nanotubes coupled to the first fabric. The first carbon nanotubes of the plurality of first carbon nanotubes are metallic carbon nanotubes. A second fabric includes a plurality of second carbon nanotubes coupled to the second fabric. The second carbon nanotubes of the plurality of second carbon nanotubes are semiconductive carbon nanotubes. The first fabric is interconnected with the second fabric.
    Type: Grant
    Filed: April 25, 2017
    Date of Patent: August 6, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Abram L. Falk, Shu-Jen Han, Bharat Kumar
  • Patent number: 10374179
    Abstract: In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: August 6, 2019
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Sarunya Bangsaruntip, Shu-Jen Han, HsinYu Tsai
  • Publication number: 20190234800
    Abstract: A computer-implemented method of forming a thermal-based electronic image of an object that includes receiving electromagnetic radiation emitted by the object at an optically sensitive layer including a superpixel having a plurality of pixels. Each pixel of the plurality of pixels includes a plasmonic absorber having a characteristic resonance wavelength and that generates a radiance measurement of the electromagnetic radiation at its characteristic resonance wavelength. The method further provides for determining, at a processor, an emissivity and temperature for the electromagnetic radiation received at the superpixel using the radiance measurements obtained at the pixels of the superpixel. In addition, the method provides for forming an image of the object from the determined emissivity and temperature.
    Type: Application
    Filed: April 10, 2019
    Publication date: August 1, 2019
    Inventors: Ali Afzali-Ardakani, Abram L. Falk, Damon B. Farmer, Shu-Jen Han, George S. Tulevski