Patents by Inventor Shu-Jen Han

Shu-Jen Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11211560
    Abstract: Sub-lithographic structures configured for selective placement of carbon nanotubes and methods of fabricating the same generally includes alternating conformal first and second layers provided on a topographical pattern formed in a dielectric layer. The conformal layers can be deposited by atomic layer deposition or chemical vapor deposition at thicknesses less than 5 nanometers. A planarized surface of the alternating conformal first and second layers provides an alternating pattern of exposed surfaces corresponding to the first and second layer, wherein a width of at least a portion of the exposed surfaces is substantially equal to the thickness of the corresponding first and second layers. The first layer is configured to provide an affinity for carbon nanotubes and the second layer does not have an affinity such that the carbon nanotubes can be selectively placed onto the exposed surfaces of the alternating pattern corresponding to the first layer.
    Type: Grant
    Filed: November 20, 2019
    Date of Patent: December 28, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Shu-Jen Han
  • Patent number: 11205777
    Abstract: Batteries include an anode, an electrolyte having a high solubility for lithium ions and oxygen, and a cathode formed on a substrate. Lithium ions migrate from the anode through the electrolyte to form Li2O2 at a surface of the cathode. A current collector positioned in the electrolyte, the electrolyte separating the anode from the cathode.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: December 21, 2021
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, ASELSAN ELEKTRONIK SANAY VE TICARET A.S.
    Inventors: Esin Akca, Cagla Akgun, Gokhan Demirci, Damon B. Farmer, Shu-Jen Han, Hareem T. Maune, Dahyun Oh
  • Patent number: 11202860
    Abstract: A drug delivery system includes a substrate, an integrated sensor disposed on the substrate, a drug delivery element disposed on the substrate, and a control unit coupled to the integrated sensor and the drug delivery element. The integrated sensor includes first and second electrodes disposed on a first surface of the substrate. The drug delivery element includes a reservoir disposed on the first surface of the substrate, a thermally active polymer enclosing the reservoir, and a heating coil disposed over the thermally active polymer. The control unit is configured to measure a biological parameter by measuring a voltage difference between the first and second electrodes of the integrated sensor, and to apply a trigger signal to the heating coil of the drug delivery element responsive to the measured biological parameter indicating a designated condition to heat up the thermally active polymer to selectively release a drug from the reservoir.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: December 21, 2021
    Assignee: International Business Machines Corporation
    Inventors: Qing Cao, Shu-Jen Han, Jianshi Tang, Bharat Kumar
  • Publication number: 20210343930
    Abstract: A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.
    Type: Application
    Filed: April 29, 2020
    Publication date: November 4, 2021
    Inventors: Hong-Hui Hsu, Wei-Chuan Chen, Qinli Ma, Shu-Jen Han
  • Publication number: 20210328135
    Abstract: A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.
    Type: Application
    Filed: April 15, 2020
    Publication date: October 21, 2021
    Inventors: Qinli Ma, Wei-Chuan Chen, Shu-Jen Han
  • Patent number: 11150184
    Abstract: Differential, plasmonic, non-dispersive infrared gas sensors are provided. In one aspect, a gas sensor includes: a plasmonic resonance detector including a differential plasmon resonator array that is resonant at different wavelengths of light; and a light source incident on the plasmonic resonance detector. The differential plasmon resonator array can include: at least one first set of plasmonic resonators interwoven with at least one second set of plasmonic resonators, wherein the at least one first set of plasmonic resonators is configured to be resonant with light at a first wavelength, and wherein the at least one second set of plasmonic resonators is configured to be resonant with light at a second wavelength. A method for analyzing a target gas and a method for forming a plasmonic resonance detector are also provided.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: October 19, 2021
    Assignee: International Business Machines Corporation
    Inventors: Abram L. Falk, Damon B. Farmer, Shu-Jen Han
  • Patent number: 11121335
    Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: September 14, 2021
    Assignee: International Business Machines Corporation
    Inventors: Damon B. Farmer, Shu-Jen Han, Jianshi Tang
  • Patent number: 11114605
    Abstract: A composite storage layer for magnetic memory devices includes a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer. The tri-layered spacer stack comprises a first non-magnetic layer, a discontinuous, insulating oxide layer, and a second non-magnetic layer. The discontinuous, insulating oxide layer is sandwiched by the first non-magnetic layer and the second non-magnetic layer.
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: September 7, 2021
    Assignee: HeFeChip Corporation Limited
    Inventors: Qinli Ma, Youngsuk Choi, Shu-Jen Han
  • Publication number: 20210265561
    Abstract: A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.
    Type: Application
    Filed: May 9, 2021
    Publication date: August 26, 2021
    Inventors: Qinli Ma, Wei-Chuan Chen, Youngsuk Choi, Shu-Jen Han
  • Patent number: 11024750
    Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: June 1, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Zhihong Chen, Shu-Jen Han, Siyuranga O. Koswatta, Alberto Valdes Garcia
  • Publication number: 20210134504
    Abstract: A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a first spacer layer adjacent to the second pinned layer, a second spacer layer, a ferromagnetic layer sandwiched by the first spacer layer and the second spacer layer, a polarization enhancement layer adjacent to the second spacer layer.
    Type: Application
    Filed: January 15, 2021
    Publication date: May 6, 2021
    Inventors: Qinli Ma, Youngsuk Choi, Shu-Jen Han
  • Publication number: 20210129176
    Abstract: A method of protecting an in-vivo sensor includes forming a sensing surface on a surface of the in-vivo sensor, the sensing surface including a functionalized monolayer that will bind to an analyte of interest; and coating the sensing surface of the sensor with a bioabsorbable polymeric coating including a bioabsorbable polymer; wherein the bioabsorbable polymeric coating is configured to protect the in-vivo sensor until needed for implantation.
    Type: Application
    Filed: December 22, 2020
    Publication date: May 6, 2021
    Inventors: Shu-Jen Han, Bharat Kumar, George S. Tulevski
  • Patent number: 10966621
    Abstract: Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors. Embodiments also include a methods of forming flexible active electrode arrays including depositing a flexible polymer on a substrate. The methods also include forming a plurality of sensors on the flexible polymer and attaching a silicon-based chip to the flexible shank. The methods also include coating the flexible shank in a bioabsorbable material and cutting the shank and a portion of the bioabsorbable material from the substrate.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: April 6, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Shu-Jen Han
  • Patent number: 10960433
    Abstract: A method of protecting an in-vivo sensor includes forming a sensing surface on a surface of the in-vivo sensor, the sensing surface including a functionalized monolayer that will bind to an analyte of interest; and coating the sensing surface of the sensor with a bioabsorbable polymeric coating including a bioabsorbable polymer; wherein the bioabsorbable polymeric coating is configured to protect the in-vivo sensor until needed for implantation.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: March 30, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shu-Jen Han, Bharat Kumar, George S. Tulevski
  • Patent number: 10943786
    Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: March 9, 2021
    Assignee: ELPIS TECHNOLOGIES INC.
    Inventors: Qing Cao, Shu-Jen Han, Ning Li, Jianshi Tang
  • Patent number: 10944556
    Abstract: A random value generator is provided that comprises a carbon nanotube structure that generates a random output current in response to a voltage input. The random value generator includes a random value output circuit coupled to the carbon nanotube structure that receives the random output current from the carbon nanotube structure and generates a random output value based on the received random output current from the carbon nanotube structure.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: March 9, 2021
    Assignee: International Business Machines Corporation
    Inventors: Pau-Chen Cheng, Shu-Jen Han, Jianshi Tang
  • Patent number: 10915023
    Abstract: A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: February 9, 2021
    Assignee: International Business Machines Corporation
    Inventors: Shu-Jen Han, Brian Lin, Hareem T. Maune, Charles T. Rettner, Linda K. Sundberg, Leslie E. Thompson, Hoa D. Truong
  • Publication number: 20210020215
    Abstract: A magnetic tunneling junction (MTJ) element is disclosed. The MTJ element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer includes an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The composite capping layer is in direct contact with the free layer and forms a first interface with the free layer. The composite capping layer is in direct contact with a top electrode and forms a second interface with the top electrode.
    Type: Application
    Filed: July 21, 2019
    Publication date: January 21, 2021
    Inventors: Qinli Ma, Wei-Chuan Chen, Youngsuk Choi, Shu-Jen Han
  • Publication number: 20210005809
    Abstract: A method for fabricating a magnetic tunneling junction (MTJ) element is disclosed. A substrate is provided. A reference layer is formed on the substrate. A tunnel barrier layer is formed on the reference layer. A free layer is formed on the tunnel barrier layer. A composite capping layer is formed on the free layer. The composite capping layer comprises an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The reference layer, the tunnel barrier layer, the free layer, and the composite capping layer constitute an MTJ stack.
    Type: Application
    Filed: September 18, 2019
    Publication date: January 7, 2021
    Inventors: Qinli Ma, Wei-Chuan Chen, Youngsuk Choi, Shu-Jen Han
  • Patent number: 10830647
    Abstract: A computer-eimplemented thermal imaging device having an optically-sensitive layer that includes a superpixel having at least one pixel. The at least one pixel includes a plasmonic absorber configured to obtain radiance measurements of electromagnetic radiation emitted from an object at a plurality of wavelengths. The device further includes a processor configured to determine an emissivity and temperature for the electromagnetic radiation received at the plasmonic material from the object using the radiance measurements and to form an image of the object from the determined emissivity and temperature.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: November 10, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Abram L. Falk, Damon B. Farmer, Shu-Jen Han, George S. Tulevski