Patents by Inventor Shu-Jen Hen

Shu-Jen Hen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Graphene based three-dimensional integrated circuit device
    Patent number: 8895372
    Abstract: A three-dimensional (3D) integrated circuit (IC) structure includes a first layer of graphene formed over a substrate; a first level of one or more active devices formed using the first layer of graphene; an insulating layer formed over the first level of one or more active devices; a second layer of graphene formed over the insulating layer; and a second level of one or more active devices formed using the second layer of graphene, the second level of one or more active devices electrically interconnected with the first level of one or more active devices.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: November 25, 2014
    Assignee: International Business Machines Corporation
    Inventors: Dechao Guo, Shu-Jen Hen, Chung-Hsun Lin, Ning Su
  • Controlling threshold voltage in carbon based field effect transistors
    Patent number: 8598665
    Abstract: A field effect transistor fabrication method includes defining a gate structure on a substrate, depositing a dielectric layer on the gate structure, depositing a first metal layer on the dielectric layer, removing a portion of the first metal layer, depositing a second metal layer, annealing the first and second metal layers, and defining a carbon based device on the dielectric layer and the gate structure.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: December 3, 2013
    Assignee: International Business Machines Corporation
    Inventors: Martin M. Frank, Dechao Guo, Shu-Jen Hen, Kuen-Ting Shiu
  • Graphene based three-dimensional integrated circuit device
    Patent number: 8450779
    Abstract: A three-dimensional (3D) integrated circuit (IC) structure includes a first layer of graphene formed over a substrate; a first level of one or more active devices formed using the first layer of graphene; an insulating layer formed over the first level of one or more active devices; a second layer of graphene formed over the insulating layer; and a second level of one or more active devices formed using the second layer of graphene, the second level of one or more active devices electrically interconnected with the first level of one or more active devices.
    Type: Grant
    Filed: March 8, 2010
    Date of Patent: May 28, 2013
    Assignee: International Business Machines Corporation
    Inventors: Dechao Guo, Shu-Jen Hen, Chung-Hsun Lin, Ning Su
  • Controlling threshold voltage in carbon based field effect transistors
    Patent number: 8420474
    Abstract: A field effect transistor fabrication method includes defining a gate structure on a substrate, depositing a dielectric layer on the gate structure, depositing a first metal layer on the dielectric layer, removing a portion of the first metal layer, depositing a second metal layer, annealing the first and second metal layers, and defining a carbon based device on the dielectric layer and the gate structure.
    Type: Grant
    Filed: January 11, 2012
    Date of Patent: April 16, 2013
    Assignee: International Business Machines Corporation
    Inventors: Martin M. Frank, Dechao Guo, Shu-Jen Hen, Kuen-Ting Shiu