Patents by Inventor Shu-Jenn YU

Shu-Jenn YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Isolation structure
    Patent number: 9583564
    Abstract: A structure comprises a p-type substrate, a deep n-type well and a deep p-type well. The deep n-type well is adjacent to the p-type substrate and has a first conductive path to a first terminal. The deep p-type well is in the deep n-type well, is separated from the p-type substrate by the deep n-type well, and has a second conductive path to a second terminal. A first n-type well is over the deep p-type well. A first p-type well is over the deep p-type well.
    Type: Grant
    Filed: February 11, 2014
    Date of Patent: February 28, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Jenn Yu, Meng-Wei Hsieh, Shih-Hsien Yang, Hua-Chou Tseng, Chih-Ping Chao
  • ISOLATION STRUCTURE
    Publication number: 20140264618
    Abstract: A structure comprises a p-type substrate, a deep n-type well and a deep p-type well. The deep n-type well is adjacent to the p-type substrate and has a first conductive path to a first terminal. The deep p-type well is in the deep n-type well, is separated from the p-type substrate by the deep n-type well, and has a second conductive path to a second terminal. A first n-type well is over the deep p-type well. A first p-type well is over the deep p-type well.
    Type: Application
    Filed: February 11, 2014
    Publication date: September 18, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Jenn YU, Meng-Wei HSIEH, Shih-Hsien YANG, Hua-Chou TSENG, Chih-Ping CHAO