Abstract: Embodiments of the present disclosure relate to multi-flow gas circuits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body, one or more heat sources, and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves are in fluid communication with a first set of inject passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with a second set of inject passages. The second set of inject passages and the first set of inject passages alternate with respect to each other along the plurality of flow levels.

Abstract: Embodiments of the present disclosure relate to multi-flow methods and related apparatus applicable for semiconductor manufacturing. In one or more embodiments, a method of substrate processing includes flowing a first gas flow into a first set of flow levels of a processing chamber, and flowing a second gas flow into a second set of flow levels of the processing chamber simultaneously with the flowing of the first gas flow. The first set of flow levels and the second set of flow levels alternate with respect to each other. The method includes heating one or more substrates positioned in the processing chamber.

Abstract: The present disclosure relates to heaters, and related chamber kits and processing chambers, for semiconductor manufacturing. In one or more embodiments, a chamber kit applicable for semiconductor manufacturing includes a heater and a liner. The heater includes an arcuate heater body including one or more first sections, one or more second sections, and one or more connector sections. The heater includes a first electrode coupled to the arcuate heater body, and a second electrode coupled to the arcuate heater body. The liner includes a ledge sized and shaped to support the arcuate heater body, a first opening sized and shaped to receive at least part of the heater therethrough, and a second opening sized and shaped to receive at least part of the heater therethrough.

Abstract: Embodiments of the present disclosure relate to chamber kits, processing chambers, and related methods and components for gas activation applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body and one or more heat sources configured to heat a processing volume of the chamber body. The chamber body includes one or more gas inject passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body. The processing chamber includes a first pre-heat ring that includes a first opaque surface, and a second pre-heat ring that includes a second opaque surface. The first pre-heat ring and the second pre-heat ring define a first gas flow path between the first opaque surface and the second opaque surface, and the first gas flow path in fluid communication with at least one of the one or more gas inject passages.

Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first flow controllers operable to flow a first gas, one or more second flow controllers operable to flow a second gas, and one or more valve assemblies. The valve assembl(ies) include a first supply line connected to a respective first flow controller and a second supply line connected to a respective second flow controller. The gas circuit further includes a plurality of valves operable to open and close the respective flow of the first gas and the second gas received from the first flow controller(s) and the second flow controller(s).

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first ratio flow controllers operable to control a flow of a first gas, a plurality of first valves operable to open and close the flow of the first gas, one or more second ratio flow controllers operable to control a flow of a second gas, and a plurality of second valves operable to open and close the flow of the second gas. The gas circuit further includes a first set of gas lines connected to the first ratio flow controllers, and a second set of gas lines connected to the second ratio flow controllers.

Abstract: Embodiments described herein relate to lift frames for central heating, and related processing chambers and methods. In one or more embodiments, a lift frame for positioning in a processing chamber applicable for use in semiconductor manufacturing includes a shaft. The shaft includes an opening formed in the shaft, and the shaft includes a first material. The lift frame includes a plurality of arms extending outwardly relative to the shaft, and an absorptive mass disposed in the opening of the shaft. The absorptive mass includes a second material having a higher absorptivity than the first material of the shaft.

Abstract: Embodiments of the disclosure provided herein include an apparatus and system for semiconductor processing. The apparatus includes a processing chamber. The processing chamber includes a substrate support disposed within a processing volume, a controller coupled to the processing chamber, and a carrier and feed ring disposed around the processing volume. The carrier and feed ring includes a ring body, a radical source coupled to at least one ring gas port on a first side of the ring body, and a high-vacuum pump in fluid communication with a ring vacuum port disposed on a second side of the ring body.

Abstract: A modular reflective heating system for use in a process chamber is provided. The modular reflective heating system includes: a plurality of connectors; a plurality of lamps, each lamp connected to at least one of the connectors; a reflector including: a base; and a reflective assembly including a first plurality of reflective portions and a second plurality of reflective portions. Each reflective portion in the first plurality of reflective portions and the second plurality of reflective portions is connected to the base, and each reflective portion in the first plurality of reflective portions and the second plurality of reflective portions is configured to be individually disconnected from the base. The modular reflective heating system further includes a spare reflective portion configured to replace a first reflective portion in the first plurality of reflective portions or the second plurality of reflective portions.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: An alignment assembly includes a sensor and a lid that includes a first window. The alignment assembly also includes a rotary joint coupled to the lid. The alignment assembly also includes a jig coupled to the rotary joint and pivotable relative to the lid about the rotary joint. The jig includes an extendable arm that is moveable from a retracted position where the sensor is disposed in a first position above the first window to an extended position where the sensor is disposed at a second position above the first window. The alignment assembly also includes a lock configured to selectively pivotably lock the jig to the lid and also to selectively lock the extendable arm in the retracted position or the extended position.

Abstract: Disclosed herein are a processing chamber, a radical generation cartridge, and a method for etching amorphous silicon selectively relative to crystalline silicon. In one example, the selective silicon etching process is performed in an epitaxy processing chamber. In an example, a processing chamber is provided that includes a chamber body, a transparent dome, a susceptor, a heat source, and a first hot wire filament. The transparent dome is disposed on the chamber body and with the body, partially enclosing a processing volume. The susceptor is disposed in the processing volume. The heat source is positioned to direct radiant energy through the transparent dome toward the susceptor. The first hot wire filament is disposed in a first gas inlet formed through the chamber body. The first hot wire filament is configured to generate radicals from gas flowing through the first gas inlet into the processing volume of the processing chamber.

Abstract: The disclosure relates to homing methods for lift assemblies, and related apparatus and components, for processing chambers. In one or more embodiments, a non-transitory computer readable medium includes instructions that cause a plurality of operations to be conducted. The operations include detecting a fault condition, and determining a first position of a first support frame along a first movement range. The operations include determining a second position of a second support frame along a second movement range. The second movement range overlaps with the first movement range by an overlap range. The operations include determining if the first position is in an inside condition or an outside condition. The inside condition is within the overlap range, and the outside condition is outside of the overlap range. The operations include moving the first support frame and the second support frame respectively to a first retracted position and a second retracted position.

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.