Abstract: A factory management system and control system are provided. The factory management system includes: a machine; multiple sensors disposed corresponding to the machine and generates multiple first sensing data; a server; and a control system coupled to the machine and the server. The control system receives the first sensing data to generate multiple corresponding control commands in real time and transmits the control commands to the machine. The control system receives a user login message and receives multiple second sensing data and displays the second sensing data in a user login status. The control system receives a user control command and transmits a second control command corresponding to the user control command to the machine. When the control system determines that an abnormal condition occurs according to the second sensing data in the user login status, the control system sends a warning message.

Abstract: A factory management system and control system are provided. The factory management system includes: a machine; multiple sensors disposed corresponding to the machine and generates multiple first sensing data; a server; and a control system coupled to the machine and the server. The control system receives the first sensing data to generate multiple corresponding control commands in real time and transmits the control commands to the machine. The control system receives a user login message and receives multiple second sensing data and displays the second sensing data in a user login status. The control system receives a user control command and transmits a second control command corresponding to the user control command to the machine. When the control system determines that an abnormal condition occurs according to the second sensing data in the user login status, the control system sends a warning message.

Abstract: An electrostatic discharge protection device coupled between a first power line and a second power line is provided. A first N-type doped region is formed in a P-type well. A first P-type doped region is formed in the first N-type doped region. A second P-type doped region includes a first portion and a second portion. The first portion of the second P-type doped region is formed in the first N-type doped region. The second portion of the second P-type doped region is formed outside of the first N-type doped region. A second N-type doped region is formed in the first portion of the second P-type doped region. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region constitute an insulated gate bipolar transistor (IGBT).

Abstract: An ESD protection structure is disclosed. A substrate comprises a first conductive type. A first diffusion region is formed in the substrate. A first doped region is formed in the first diffusion region. A second doped region is formed in the first diffusion region. A third doped region is formed in the substrate. A first isolation region is formed in the substrate, covers a portion of the first diffusion region and is located between the second and the third doped regions. A fourth doped region is formed in the substrate. When the first doped region is coupled to a first power line and the third and the fourth doped regions are coupled to a second power line, an ESD current can be released to the second power line from the first power line. During the release of the ESD current, the second doped region is not electrically connected to the first power line.

Abstract: An ESD protection structure is disclosed. A substrate comprises a first conductive type. A first diffusion region is formed in the substrate. A first doped region is formed in the first diffusion region. A second doped region is formed in the first diffusion region. A third doped region is formed in the substrate. A first isolation region is formed in the substrate, covers a portion of the first diffusion region and is located between the second and the third doped regions. A fourth doped region is formed in the substrate. When the first doped region is coupled to a first power line and the third and the fourth doped regions are coupled to a second power line, an ESD current can be released to the second power line from the first power line. During the release of the ESD current, the second doped region is not electrically connected to the first power line.

Abstract: An electrostatic discharge protection device is coupled between a first power line and a second power line and comprises a P-type well, a first N-type doped region, a first P-type doped region, a second P-type doped region and a second N-type doped region. The first N-type doped region is formed in the P-type well. The first P-type doped region is formed in the first N-type doped region. The second P-type doped region comprises a first portion and a second portion. The first portion of the second P-type doped region is formed in the first N-type doped region. The second portion of the second P-type doped region is formed outside of the first N-type doped region. The second N-type doped region is formed in the first portion of the second P-type doped region. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region constitute an insulated gate bipolar transistor (IGBT).