Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.

Abstract: A moisture-permeable composite membrane is manufactured by the step of subjecting a mixture to a crosslinking treatment. The mixture contains a polyisoprene, a polyurethane with a polar functional group, a crosslinking agent, and a vulcanizing agent. In the mixture, a weight ratio of the polyurethane with the polar functional group to the polyisoprene ranges from 1:0.55 to 1:6.60. A method for manufacturing the moisture-permeable composite membrane is also provided.

Abstract: An electronic device includes a first substrate, a second substrate, a circuit layer, a diode element, and a conductive wire. The first substrate has a first surface, a second surface opposite to the first surface, and a first side surface connected between the first surface and the second surface. The second substrate has a third surface, a fourth surface opposite to the third surface, and a second side surface connected between the third surface and the fourth surface, wherein the fourth surface is disposed away from the first surface. The circuit layer and the diode element are disposed on the first surface. The diode element and the conductive wire are electrically connected to the circuit layer. A first portion of the conductive wire is disposed on the first side surface, and a second portion of the conductive wire is disposed on the second side surface.

Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A semi-vanadium(V) redox flow battery (semi-VRFB) including a positive electrolyte tank, a negative electrolyte tank and a cell stack. The positive electrolyte tank is stored with a positive electrolyte of V ions and the negative electrolyte tank is stored with a negative electrolyte of iodine(I)-vitamin C. The cell stack comprises a positive electrode, a negative electrode, an insulating film, a positive electrode plate, and a negative electrode plate. The negative electrode is made of carbon (C) sandwiched with titanium dioxide(TiO2), and can further comprise a metal or an alloy. The insulating film is located between the positive electrode and the negative electrode. The positive and negative electrode plates are located in front of the positive and negative electrodes, respectively. The positive and negative electrolytes flow through the positive and negative electrode plates to charge/discharge power by the electrochemical reactions of V ions and I-vitamin C at the positive and negative electrodes.

Abstract: A semi-vanadium (V) redox flow battery (semi-VRFB) includes a positive electrolyte tank, a negative electrolyte tank and a cell stack. The positive electrolyte tank is stored with a positive electrolyte of V ions; and the negative electrolyte tank is stored with an negative electrolyte of iodine (I)-vitamin C. The cell stack comprises a positive electrode, a negative electrode, an insulating film, a positive electrode plate and a negative electrode plate. The negative electrode is made of Carbon© and titanium dioxide (TiO2), which can further comprises a metal or an alloy. The insulating film is located between the positive electrode and the negative electrode. The positive and negative electrode plates are located in front of the positive and negative electrodes, respectively. The positive and negative electrolytes flow through the positive and negative electrode plates to charge/discharge power by the electrochemical reactions of V ions and I-vitamin C at the positive and negative electrodes.