Abstract: A chip package includes an application chip, a micro-electromechanical systems (MEMS) chip, a conductive element, a bonding wire, and a molding compound. The application chip has a conductive pad. The MEMS chip is located on the application chip, and includes a main body and a cap. The main body is located between the cap and the application chip. The main body has a conductive pad. The conductive element is located on the conductive pad of the main body of the MEMS chip. The bonding wire extends from the conductive element to the conductive pad of the application chip. The molding compound is located on the application chip and surrounds the MEMS chip. The conductive element and the bonding wire are located in the molding compound.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: An electrostatic discharge (ESD) protection structure comprises a first NPN transistor and a second NPN transistor connected in parallel. The bases of the first NPN transistor and the second NPN transistor are coupled together and further coupled to a first voltage potential and a second voltage potential through two deep trench capacitors respectively. The ESD protection structure further comprises a third deep trench capacitor and a fourth deep trench capacitor coupled between the first voltage potential and the second voltage potential.

Abstract: An electrostatic discharge (ESD) protection structure comprises a first NPN transistor and a second NPN transistor connected in parallel. The bases of the first NPN transistor and the second NPN transistor are coupled together and further coupled to a first voltage potential and a second voltage potential through two deep trench capacitors respectively. The ESD protection structure further comprises a third deep trench capacitor and a fourth deep trench capacitor coupled between the first voltage potential and the second voltage potential.