Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: A layout of a semiconductor memory device includes a substrate and a ternary content addressable memory (TCAM). The TCAM is disposed on the substrate and includes a plurality of TCAM bit cells, where at least two of the TCAM bit cells are mirror-symmetrical along an axis of symmetry, and each of the TCAM bit cells includes two storage units electrically connected to two word lines respectively, and a logic circuit electrically connected to the storage units. The logic circuit includes two first reading transistors, and two second reading transistors, where each of the second reading transistors includes a gate and source and drain regions, the source and drain regions of the second reading transistors are electrically connected to two matching lines and the first reading transistors, respectively, where the word lines are disposed parallel to and between the matching lines.

Abstract: Certain embodiments are directed to a bispecific immunoglobulin that is capable of binding cell surface molecules on a target cell, such as cancer cells, and cell surface molecules on immune effector cell, such as cytotoxic T lymphocytes, resulting in the targeted killing of target cells.

Abstract: Certain embodiments are directed to a bispecific immunoglobulin that is capable of binding cell surface molecules on a target cell, such as cancer cells, and cell surface molecules on immune effector cell, such as cytotoxic T lymphocytes, resulting in the targeted killing of target cells. In certain aspects a Bif is a polypeptide comprising a first target binding domain that specifically binds a cancer cell, a second effector binding domain that specifically binds an immunologic effector, and an immunoglobulin constant region linker operatively coupling the first and second binding domain.

Abstract: Certain embodiments are directed to a bispecific immunoglobulin that is capable of binding cell surface molecules on a target cell, such as cancer cells, and cell surface molecules on immune effector cell, such as cytotoxic T lymphocytes, resulting in the targeted killing of target cells. In certain aspects a Bif is a polypeptide comprising a first target binding domain that specifically binds a cancer cell, a second effector binding domain that specifically binds an immunologic effector, and an immunoglobulin constant region linker operatively coupling the first and second binding domain.