Abstract: The object of the invention is to provide a liquid crystal display device which can surely prevent a sealant from flowing into a display area. A liquid crystal display device comprising: two substrates 10, 20 in which a display area 11 is defined and which are overlaid with each other; at least two dam pattern structures 13d, 13d′ being provided on at least one of the substrates or provided separately on both of the substrates, which have a pattern of surrounding the display area 11; and a sealant 12 applied to the outside of the dam pattern structures in a form of surrounding the dam pattern structures. The outer dam pattern structure 13d′ adjacent to the sealant 12 has a plurality of slits 13s for causing the sealant 12 to pass therethrough.

Abstract: The object of the invention is to provide a liquid crystal display device which can surely prevent a sealant from flowing into a display area. A liquid crystal display device comprising: two substrates 10, 20 in which a display area 11 is defined and which are overlaid with each other; at least two dam pattern structures 13d, 13d′ being provided on at least one of the substrates or provided separately on both of the substrates, which have a pattern of surrounding the display area 11; and a sealant 12 applied to the outside of the dam pattern structures in a form of surrounding the dam pattern structures. The outer dam pattern structure 13d′ adjacent to the sealant 12 has a plurality of slits 13s for causing the sealant 12 to pass therethrough.

Abstract: A transparent insulation film is formed on a glass substrate. Source and drain electrodes are formed on the transparent insulation film with their ends in spaced and opposing relation. The entire face of the substrate is treated with PH.sub.3 plasma to diffuse P atoms to form a doped surface layer. An a-Si semiconductor layer is formed on the doped surface layer so as to span a space between the source and drain electrodes with the opposite end portions of the semiconductor layer overlying those electrodes. A gate insulation film is formed on the semiconductor layer to extend all over the substrate. A gate electrode is formed of metal on the top of the gate insulation film 6 such that the opposite side edges of the gate electrode are recessed inwardly of the edges of the source and drain electrodes. An excimer laser beam is radiated against the face of the substrate with the gate electrode acting as a mask so that the laser-irradiated regions of the semiconductor layer comprise source and drain regions of n.